CZRT55C9V1-G

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Diodes - Zener - Single

CZRT55C9V1-G is a single zener diode, a specialized type of diode aiming to operate in reverse-biased breakdown mode and provide a lower voltage while still allowing the current to flow in one direction.

Application field of CZRT55C9V1-G

CZRT55C9V1-G is mainly used in power-supply circuits and voltage-regulation modules. It can provide precise regulation of the output voltage regardless of variations in the load current. It also finds its application in avalanche detection and triggering circuits.

Working principle of CZRT55C9V1-G

The CZRT55C9V1-G is a single zener diode. It consists of a heavily p-doped semiconductor substrate with a heavily n-doped region on the surface. This forms two PN junctions which are parallel to each other. When the voltage is applied in the reverse bias direction, the electrons and holes form a depletion region. In this region, the electric field of the depletion region overcomes the electron affinity of the material, and electrons move from the valence to the conduction bands, resulting in the formation of an avalanche breakdown. This produces a very high current and a very low voltage, which is called a Zener breakdown.

The Zener breakdown of the CZRT55C9V1-G is an intentional action; when the reversed bias voltage reaches a certain value, the current through the diode rapidly increases, and the output voltage remains constant and stable. The current limit is determined by the internal and external resistance of the diode and also by the output voltage of the power supply.

CZRT55C9V1-G has multiple uses including power supply circuits, voltage-regulation modules, voltage triggering, and avalanche detection. Its most common application is to maintain a low voltage while still allowing the current to flow in one direction. The CZRT55C9V1-G is a low cost, low power consumption, and fast response device with a wide range of operating temperature and a high reliability.

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