CZRU5V6B Allicdata Electronics
Allicdata Part #:

CZRU5V6B-ND

Manufacturer Part#:

CZRU5V6B

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE ZENER 5.6V 150MW 0603
More Detail: Zener Diode 5.6V 150mW ±2% Surface Mount 0603/SOD-...
DataSheet: CZRU5V6B datasheetCZRU5V6B Datasheet/PDF
Quantity: 1000
4000 +: $ 0.03673
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.6V
Tolerance: ±2%
Power - Max: 150mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 0603/SOD-523F
Description

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Introduction: The CZRU5V6B is a single Zener diode designed for voltage and current regulating applications. It is housed in a SOD-123-3L package, and offers superior reverse bias Zener and avalanche characteristics for high voltage switching and protection. This article will provide a detailed overview of the CZRU5V6B\'s application field and working principle.

Application Fields: The CZRU5V6B diode has a variety of important applications in everyday electronics. It is commonly used in power management and protection circuits, providing voltage and current regulation and voltage clamping. It is also used in switching circuits to protect circuits from transients and surge voltages. Additionally, the CZRU5V6B can be used in RF and communications applications, providing an efficient means of radio frequency modulation. Finally, the diode can be used to create optical switching systems for fiber-optic communications.

Working Principle: The working principle of the CZRU5V6B diode is based on the principle of reverse bias breakdown. In reverse bias operation, a potential difference between the anode and the cathode causes the electrons in the n-type semiconductor region (cathode) to move towards the p-type semiconductor region (anode). This movement of electrons creates a large enough electric field at the junction of the two regions, which causes the electron energy to increase and ionize, causing a high current to flow.

The Zener breakdown is a special type of reverse bias breakdown that occurs when the reverse bias voltage exceeds a certain critical value called the "Zener voltage". When this happens, the electric field at the junction becomes so strong that the electric energy of the electrons is sufficient to cause them to overcome the energy barrier between the two regions. The Zener breakdown results in a large increase in electron current, causing a sharp increase in the Zener diode voltage.

The CZRU5V6B has a maximum reverse voltage rating of 5V, which is the breakdown voltage required to cause the Zener breakdown. This breakdown voltage is typically very stable, resulting in consistent current and voltage regulation over a wide range of temperature and power supply variations.

Conclusion: The CZRU5V6B diode is a single Zener diode designed for voltage and current regulating applications. It has a wide variety of applications, including power management and protection, switching, RF, and fiber-optic communications. The working principle of the diode is based on the principle of reverse bias breakdown, where the electrons in the n-type semiconductor region move towards the p-type semiconductor region, causing a high current to flow. The CZRU5V6B has a maximum reverse voltage rating of 5V, which is the breakdown voltage required to cause the Zener breakdown.

The specific data is subject to PDF, and the above content is for reference

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