
Allicdata Part #: | CZRW5241B-G-ND |
Manufacturer Part#: |
CZRW5241B-G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE ZENER 11V 350MW SOD123 |
More Detail: | Zener Diode 11V 350mW ±5% Surface Mount SOD-123 |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.03197 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 11V |
Tolerance: | ±5% |
Power - Max: | 350mW |
Impedance (Max) (Zzt): | 22 Ohms |
Current - Reverse Leakage @ Vr: | 2µA @ 8.4V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
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CZRW5241B-G is a single Zener diode, meaning the device is specially designed to allow current to flow in the reverse direction when a specific voltage is applied in the forward direction. It consists of two elements, the anode and cathode, connected in a symmetrical, symmetrical structure.
It is widely used in various fields, such as radio and microwave, power supplies, communication systems, and power supply circuits for embedded systems. The advantages of using Zener diodes to regulate voltage are excellent temperature stability and the ability to suppress voltage surges and spiking.
The main application fields of the CZRW5241B-G are typically low voltage, low power, low current and low frequency circuits. This Zener diode is also well suited for high speed applications as well as a stabilization element in multi-section circuits.
The main working principle of the diode is based on the fact that when a forward-biased diode is forward biased, it behaves like a low voltage, low impedance semiconductor. This allows current to flow between the anode and cathode when the voltage is lower than the Zener voltage. When the voltage is higher than the Zener voltage, current will not flow anymore, thus preventing overvoltage occurrence.
The CZRW5241B-G has a relatively low Zener voltage level (between 4 and 41V) and an average reverse current of over 10mA. Its breakdown voltage and leakage current are specified at 25°C and a reverse voltage of 1V. It has a high power rating of 800mW and a wide temperature range from -65 to +200°C.
The CZRW5241B-G is mainly composed of a Zener P-N junction and a resistor to limit the maximum current within the Zener diode and keeping the device stable during operation. The resistor serves to reduce the amount of overshoot when the current pulses delivered by the to the Zener diode swings back and forth after a high volt surge. It utilizes a high performance silicon wafer with excellent characteristics and robust packaging.
In general, CZRW5241B-G is a high-quality, low-cost, and easy-to-use diode that can be used in various fields such as radio and microwave, power supplies, communication systems, and other high-speed switching equipment. It is a very reliable and stable device, with a high temperature rating and a wide range of standard operating conditions. It provides excellent temperature stability, excellent voltage regulation and low leakage current, making it ideal for use in a range of applications.
The specific data is subject to PDF, and the above content is for reference
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