Allicdata Part #: | D251N08BXPSA1-ND |
Manufacturer Part#: |
D251N08BXPSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 800V 255A |
More Detail: | Diode Standard 800V 255A Stud Mount |
DataSheet: | D251N08BXPSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 255A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 30mA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Stud Mount |
Package / Case: | DO-205AA, DO-8, Stud |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -40°C ~ 180°C |
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D251N08BXPSA1 is a single diode rectifier, a device used to convert AC input to DC output. It belongs to the larger family of diodes, which are semiconductor devices that allow current to flow in only one direction. They are commonly used in power electronics, radio frequency applications, and power supplies.
The D251N08BXPSA1 is a 800V, 25A, 5A rr, 1.65 Vf and 400nC Qrr diode, offering superior performance and reliability. It has a maximum forward voltage drop of 1.65 volts and a maximum reverse voltage of 800 volts. This makes it suitable for applications such as power supplies, wiring harnesses and industrial motor control.
Diffusion Silicon (DS) is the material used to construct the diode. The S in the acronym stands for “silicon”, which explains the material. The N in the acronym means “negative”. This indicates that the diode has a negative junction potential, suggesting the device will only conduct current if a negative charge is applied first.
The D251N08BXPSA1 is constructed with a junction-structure, meaning it’s a simple construction with a PN junction. This leads to a very low forward voltage drop and very high reverse breakdown voltage. In other words, it has a low voltage drop and strong reverse voltage capability.
The diode also features an increased power dissipation capability. This is because it uses a thermal isolation layer and improved isolation technology, both of which help reduce thermal losses in power devices. This makes it suited for high frequency applications where power dissipation and low operating temperature are important considerations.
When used in power electronics circuits, the D251N08BXPSA1 offers superior performance. It has a very low forward voltage drop, allowing it to control current flow. It also has a very high reverse voltage rating, allowing it to rectify AC input to DC output. The improved power dissipation also ensures that the diode can handle higher currents without overheating.
In summary, the D251N08BXPSA1 is a single diode rectifier suited for power electronics applications. It features a low forward voltage drop, a high reverse voltage rating, and improved power dissipation capability. This makes it a great choice for applications that require superior performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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