DAP222G Allicdata Electronics

DAP222G Discrete Semiconductor Products

Allicdata Part #:

DAP222GOSTR-ND

Manufacturer Part#:

DAP222G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 80V 100MA SC75
More Detail: Diode Array 1 Pair Common Anode Standard 80V 100mA...
DataSheet: DAP222G datasheetDAP222G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 100nA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: DAP222
Description

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DAP222G is a range of rectifier diodes composed of an advanced diode array enclosed in a SOT-23 package. It is intended as a replacement for a single rectifier diode when higher power dissipation or low forward voltage is required. It is most commonly used in automotive and computing applications.

The key feature of this device is its low forward voltage drop, which can be up to 70%, compared to a single diode that typically has a forward voltage drop of 400-500mV. This low forward voltage allows for improved system efficiency since less voltage is lost during the on-state of the diode.

In addition, DAP222G has a high power dissipation allowing for operation in environments exposed to temperature variations. These high power ratings also make the device suitable for applications that require a fast switching frequency. It also has a low leakage current which helps in reducing thermal noise.

The internal construction of the DAP222G consists of an array of Diodes in a 4:1 ratio. This allows the device to act like a single power diode, with the added benefits of lower voltage and higher power dissipation. When a voltage is applied, the current passes through the lower forward voltage diodes and is diverted away from the higher forward voltage diodes. The result is a lower voltage drop in the device compared to a single diode.

The working principle of the DAP222G is based on the principle of rectification, where alternating current (AC) is converted into direct current (DC) voltage. In a single diode rectifier, current only passes through the diode when the voltage is positive. In the DAP222G, by combining the four diodes in an array, current can pass through the device when the voltage is both negative and positive. This allows the device to act as a bidirectional rectifier and results in improved efficiency.

The DAP222G is most commonly used for automotive and computing applications due to its low forward voltage and high power dissipation. It can also be used in power supply designs where reduced voltage losses are required, or in high-performance designs, such as those required for fast switching frequencies. The device also offers protection against reverse current, as well as thermal and surge protection.

Overall, the DAP222G range of rectifier diodes provide improved efficiency and increased power dissipation, making them an ideal choice for automotive and computing applications. The low forward voltage drop, combined with high power dissipation, make the device suitable for applications that require reduced voltage losses, as well as those that require high switching frequencies. The device also has low leakage current, providing protection against thermal and surge protection.

The specific data is subject to PDF, and the above content is for reference

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