DAP236UT106 Discrete Semiconductor Products |
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Allicdata Part #: | DAP236UT106TR-ND |
Manufacturer Part#: |
DAP236UT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE SWITCH BAND 35V 3EMD TR |
More Detail: | RF Diode Standard - 1 Pair Common Anode 35V 150mW... |
DataSheet: | DAP236UT106 Datasheet/PDF |
Quantity: | 18000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard - 1 Pair Common Anode |
Voltage - Peak Reverse (Max): | 35V |
Capacitance @ Vr, F: | 1.2pF @ 6V, 1MHz |
Resistance @ If, F: | 900 mOhm @ 2mA, 100MHz |
Power Dissipation (Max): | 150mW |
Operating Temperature: | 125°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMD3 |
Base Part Number: | DAP236 |
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DAP236UT106 is a high-performance RF Schottky diode, which is mainly used in the field of a variety of low-noise harmonic and mixer applications. These diodes are mainly used in the frequency range from DC to 6GHz, and are designed for broadband signal detection, signal demodulation and conversion applications.
First, let\'s look at the DAP236UT106 diodes\' construction. The DAP236UT106 diodes are made of a high-performance silicon epitaxial wafer with a few components to form a structure. The active layer consists of a silicon epitaxial layer and a heavily doped collector. The diodes also have an anode, anode gate, collector, and a metal layer for connection. All of these components are connected by a soldering process.
Now, let\'s review the working principle behind the DAP236UT106 diodes. In operation, current flows freely between the anode and collector of the diode when a voltage potential is applied to the diode. The current flow creates a charge which is stored at the anode node and creates a potential barrier between the anode and the collector. This potential barrier is known as the Schottky barrier.
The Schottky barrier allows for high-frequency operation without the need for a traditional junction-type detector. The Schottky barrier has a much lower capacitance than a traditional PN junction and is able to provide better protection for RF signals against excessive loading.
When an input signal is applied to the diode, it will start to oscillate, resulting in an output signal. The output signal is then amplified by the diode’s collector node, thus creating a voltage difference between the collector and the anode. This difference is what causes the diode to rectify the signal and convert it into a pulse.
In addition to signal conversion, the DAP236UT106 diodes are also used for signal detection. When an input signal is applied to the anode of the diode, it starts to oscillate. This oscillation then generates a pulse, which is then detected by the anode-gate node. The detector then amplifies the signal and generates a new signal that is useful for signal processing.
In conclusion, the DAP236UT106 diodes are used in low-noise harmonic and mixer applications. Thanks to their design, these diodes are able to provide better protection for RF signals and enable high-frequency operations without the need for a traditional junction-type detector. Moreover, DAP236UT106 diodes are also used for signal detection and conversion. In any case, these diodes are a reliable and robust choice for a variety of data acquisition and communication tasks.
The specific data is subject to PDF, and the above content is for reference
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