DCP68-25-13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 500mA, 1V
Power - Max:	1W
Frequency - Transition:	330MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223

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Introduction

DC enhancement-modeP68-25-13, also known as Field-effect Transistor (FET) or junction transistor is one type of transistors. It is most popularly employed to amplify or switch electronic signals. It is being used extensively in a variety of electronic circuits in order to efficiently perform various operations.

Application Field

DC enhancement-modeP68-25-13 is often used in applications that require precisely controlled switching, such as in an AC line voltage switching and in low-level analog signal processing. Commonly, it is used in control and buffer stages in audio amplifiers, video amplifiers, high-bandwidth radio-frequency amplifiers, and in analog signal generators. Moreover, due to its low leakage current, high frequency operation and high speed, it is highly suitable for high-density integrated circuit designs with limited board space and restricted gate length.

Working Principle

The DC enhancement-modeP68-25-13 is a three-terminal device. The gate, drain and source terminals are connected to two metal-oxide-semiconductor (MOS) field-effect transistors (FETs) with opposite polarities. It operates by creating channels of conduction between the drain and source terminals, the gate voltage being used to modulate the width of these channels, thus controlling the current flow. When a gate-source voltage is applied, an electric field develops at the junction of the gate and channel that modulates the channel width. The channel width varies depending on the magnitude of the gate-source voltage and the level of the source-drain current. This is known as field-effect action and thus, DC enhancement-modeP68-25-13 is a field-effect transistors (FETs).The FETs in DC enhancement-modeP68-25-13 are operated in enhancement mode, in which no current flows from the source to the drain. However, the electric field developed at the gate-source junction can modulate the conduction level between the source and drain. This phenomenon is known as the depletion effect, in which the width of the channel is reduced by the gate voltage. In this mode, the gate voltage is greater than the threshold voltage, thus causing the current to flow.

Conclusion

In conclusion, DC enhancement-modeP68-25-13 is an efficient and versatile type of transistor and is used in a variety of applications. It is a field-effect transistor (FET) and is operated in enhancement mode in order to precisely control the current flow. It is suitable for high-density integrated circuit designs with limited board space and restricted gate length and is commonly employed in the fields of audio amplification, video amplification, high-bandwidth radio-frequency amplifiers and in analog signal generators.

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