DCP69-16-13 Allicdata Electronics
Allicdata Part #:

DCP69-16DITR-ND

Manufacturer Part#:

DCP69-16-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 20V 1A SOT-223
More Detail: Bipolar (BJT) Transistor PNP 20V 1A 200MHz 1W Surf...
DataSheet: DCP69-16-13 datasheetDCP69-16-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: DCP69
Description

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DCP69-16-13 is a type of transistor known as a Bipolar Junction Transistor (BJT). It is a single transistor, meaning it contains one base, one emitter, and one collector. The transistor is made of semiconducting material such as silicon and germanium, and the base, emitter and collector are formed of different layers of the material. The base and emitter are made of a heavily-doped semiconductor material, while the collector is formed of lightly-doped semiconductor material.

The main purpose of the DCP69-16-13 transistor is to amplify or switch a current or voltage. When the base-emitter junction is forward biased (positive voltage applied to the base, negative voltage to the emitter), it allows a small current (the base current) to flow from the base to the emitter, which in turn allows a larger current (the collector current) to flow from the collector to the emitter. This current amplification effect makes bipolar junction transistor (BJT) transistors ideal for amplifying small signals.

The DCP69-16-13 is also commonly used as a switch. When the base-emitter junction is reverse biased (negative voltage applied to the base, positive voltage to the emitter), the base current is reduced to near zero. When this happens, the transistor turns off, blocking the current from the collector to the emitter, thus acting as a switch. The ability to switch reliably at high frequencies is a major advantage of BJT transistors and makes them ideal for many different applications.

The DCP69-16-13 can be used in a variety of applications. It is commonly used in power amplifiers, audio amplifiers, radio amplifiers, RF amplifiers, voltage amplifiers, current amplifiers, oscillators, and digital logic circuits. It is also used as a switching device, such as in relays, photovoltaic cells, and signal processing circuits.

The DCP69-16-13 is a relatively low power transistor, rated at 0.1A at 40V, with a maximum power dissipation of 400mW. It is also a surface-mounted device (SMD), meaning it is designed to be soldered onto a circuit board, making it ideal for portable or miniature applications. The transistor is also relatively low-cost, making it suitable for large-scale applications.

In summary, the DCP69-16-13 is a single Bipolar Junction Transistor (BJT) designed to amplify or switch a current or voltage. It is commonly used in a wide variety of applications, including amplifiers, oscillators, digital logic circuits, relays, and photovoltaic cells. It is a low power device that is relatively inexpensive and designed for surface-mounted applications.

The specific data is subject to PDF, and the above content is for reference

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