Allicdata Part #: | DCX68DITR-ND |
Manufacturer Part#: |
DCX68-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 20V 1A SOT89-3 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 1A 330MHz 1W Surf... |
DataSheet: | DCX68-13 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 85 @ 500mA, 1V |
Power - Max: | 1W |
Frequency - Transition: | 330MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | DCX68 |
Description
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DCX68-13 is a type of bipolar junction transistor (BJT). It composed of three terminals: emitter, base, and collector. It has numerous semiconductor components primarily used in integrated circuits to amplify or switch electric signals. A BJT is further classified into two types: NPN and PNP. These two types are characterized by the arrangement of doping near the PN junctions. Here, DCX68-13 belongs to the PNP type BJT. DCX68-13 has several potential applications. It is commonly used as a switching device for electronic circuits as well as for amplifying signals. Furthermore, it is used to control power semiconductor components such as relays, solenoids, and motors. Specifically, it can be used in devices such as RF power amplifiers, power supplies, low noise amplifiers, and oscillators. Moreover, its high frequency properties make it ideal for applications such as television and satellite broadcasting. Additionally, it is also suitable for circuit protection applications like surge protectors and short circuits. The working principle of DCX68-13 BJT lies in the operation of its PN junctions. A base emitter junction is formed at the emitter side and a base collector junction is formed at the collector side. The current is applied to the base and thus, electrons flow from the emitter to the collector. This process is known as the forward bias condition. As a result, current is produced at the collector side. When the reverse bias condition is applied, the electrons flow from the collector to the emitter. This results in a decrease of the collector current and inhibits the flow of electrons from the base. This process is known as cutoff. As a result, the transistor functions as an open circuit. By making use of these two properties, DCX68-13 can be used a switch in electronic circuits. It can be operated in either of the two states: open or closed. When the transistor is in open state the current is cut off, thus the circuit is open. When the transistor is in close state the current flows and, thus the circuit is closed. To sum up, DCX68-13 is a type of PNP BJT useful for various applications including RF power amplifiers, power supplies, low noise amplifiers, and oscillators. Its working principle involves the forward bias and reverse bias conditions, which allows it to be used as a switch. Furthermore, it is capable of controlling power semiconductor components such as relays, solenoids and motors.The specific data is subject to PDF, and the above content is for reference
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