DCX69-16-13 Allicdata Electronics
Allicdata Part #:

DCX69-16DITR-ND

Manufacturer Part#:

DCX69-16-13

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 20V 1A SOT89-3
More Detail: Bipolar (BJT) Transistor PNP 20V 1A 200MHz 1W Surf...
DataSheet: DCX69-16-13 datasheetDCX69-16-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.09056
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Power - Max: 1W
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: DCX69
Description

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The DCX69-16-13 is a type of transistor known as a single bipolar junction transistor (BJT). BJTs are electronic devices made up of three layers of semiconductor material, and the number of layers, or junctions, that a BJT contains determines its type. The DCX69-16-13 is an NPN type of single BJT, so called because it has two layers of P-type material (collector and emitter) separated by an N-type material (base).

NPN bipolar junction transistors are used in a variety of electronic circuits, from amplifiers and modulators to switching circuits. In its simplest form, the transistor acts as an electronic switch, allowing current to flow between the collector and emitter when the base voltage is higher than the emitter voltage. This is known as forward-biased conduction. When the base voltage is lower than the emitter voltage, the transistor is said to be reverse-biased, and current does not flow.

The DCX69-16-13 is useful for applications requiring high-voltage, low-power transistors such as amplifier applications, in which the DCX69-16-13 can provide up to 16 volts of collector-emitter voltage and 13 volts of base voltage. In addition, the transistor has a relatively low power consumption of 1.2 watts, and can function in temperatures ranging from -65°C to +150°C.

The DCX69-16-13 is also suitable for switching applications, due to its large current handling capacity and small size. The transistor is designed to handle up to 0.5 amps of collector current and can switch very quickly due to its low capacitance of 270 pF (picofarads). In addition, the DCX69-16-13 has a high current gain, or hFE, rating of 150, meaning that the transistor can amplify a small amount of current from the base to produce a larger output current from the collector.

In summary, the DCX69-16-13 is a single bipolar junction transistor well-suited for amplifying and switching applications that require a high voltage, low-power device. Its features make it an ideal choice for applications such as audio amplifiers, pulse generators and logic circuits.

The specific data is subject to PDF, and the above content is for reference

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