DDZ9682-7 Allicdata Electronics
Allicdata Part #:

DDZ9682-7DITR-ND

Manufacturer Part#:

DDZ9682-7

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 2.7V 500MW SOD123
More Detail: Zener Diode 2.7V 500mW ±5% Surface Mount SOD-123
DataSheet: DDZ9682-7 datasheetDDZ9682-7 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03999
6000 +: $ 0.03478
15000 +: $ 0.02956
30000 +: $ 0.02782
75000 +: $ 0.02608
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.7V
Tolerance: ±5%
Power - Max: 500mW
Current - Reverse Leakage @ Vr: 1µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Base Part Number: DDZ9682
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Zener - Single: DDZ9682-7

The DDZ9682-7 is an example of a Single Zener Diode developed by Diodes Incorporated for various industrial and consumer applications. This device is a voltage-regulating diode in which breakdown occurs at a specific reverse voltage. The silicon planar construction of the device offers superior temperature stability and a low power loss design that is suitable for applications requiring a low forward voltage drop.The DDZ9682-7 is typically used in regulator, voltage reference, and voltage clamping applications. It can be used in both simple clamping and protection circuits where its low capacitance makes it suitable for switching or pulse-width modulation applications. The device also has a wide range of its operating parameters, including maximum power dissipation, reverse voltage, absolute maximum junction temperature and forward current. The ability to regulate voltage is due to the junctions formed between the various semiconductor layers. A depletion layer is formed when a voltage is applied in the reverse direction and electrons from the n-type region are attracted towards the p-type region. As more voltage is applied, this region of electrons in the depletion layer increases, and when this voltage reaches a specific value, the junction breaks down and current begins to flow, thus limiting the applied voltage. The precise breakdown voltage of the DDZ9682-7 is achieved through the precise doping levels of the junction layers in order to attain a specific zener voltage. The device also has a low power loss design, enabling efficient operation of the device in a wide range of conditions. Overall, due to its low capacitance and high breakdown voltage of the DDZ9682-7, it is an ideal choice for applications where precise voltages and currents need to be regulated. Due to its high efficiency, this device can be used in a variety of devices, ranging from consumer electronics to industrial machinery.

The specific data is subject to PDF, and the above content is for reference

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