DDZ9698S-7

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Diodes - Zener - Single is a category of semiconductor devices which have unique dynamic characteristics, most notably the Zener effect. It enables them to be used in a wide variety of applications such as voltage regulation, surge and transient suppression, voltage clamps and voltage references. One such device is the DDZ9698S-7.

Description

The DDZ9698S-7 is a single Zener diode with a nominal breakdown voltage of 5.6V, operating temperature range of -65 to +150oC and power dissipation of 500mW. It is designed to provide protection against electromagnetic interference (EMI) as well as reverse and forward breakdown protection for electronic components. The device is constructed from a single N-type extended barrier diode with a junction-to-case thermal resistance of 0.25oC/W.

Application Fields

The DDZ9698S-7 is suitable for a wide range of applications, from circuit protection and control to voltage clamping and EMI suppression. It is commonly used in telecom and consumer electronics such as cellular phones, laptop computers and PDAs. It can also be utilized in automotive and industrial applications, where rigorous protection and voltage regulation are required.

The DDZ9698S-7 is specially designed to provide protection against reverse current, which can occur in systems with large power supplies. It is also ideal for applications requiring low-noise operation and precision voltage regulation. Furthermore, with its low capacitance and low leakage current, the device is suitable for high-level signal level shifting.

Working Principle

DDZ9698S-7 operates using a Zener breakdown mechanism. When an excess reverse bias is applied to the junction of the diode, electrons are freed from the silicon and form a layer of acceptors in the crystal lattice, creating large concentrations of majority carriers at the junction. This creation of excess majority carriers causes a strong electric field and a sharp voltage rise across the diode that quickly reaches the Zener breakdown voltage. This results in a growth of current as the voltage increases, and a Zener breakdown occurs.

Zener breakdown prevents damage to the diode while providing an avalanche of electrons and the occasional electron-hole pair created by the Zener breakdown. These pairs and electrons neutralize each other and prevent any further buildup of the avalanche current. The voltage across the diode therefore stays at a constant level, known as the Zener voltage.

The DDZ9698S-7 contains an extended junction that is designed to reduce the capacitor effect of the junction and improve the regulation performance of the device at low currents. By utilizing the Zener breakdown phenomenon, the device provides protection against EMI and other surges, such as those caused by lightning or electrostatic discharge. Additionally, the device provides a stable voltage reference for very low currents and helps prevent parasitic oscillations that can form in other voltage regulator circuits.

Conclusion

DDZ9698S-7 is a single Zener diode with a breakdown voltage of 5.6V. It is suitable for a wide range of applications, including circuit protection, control, voltage clamping and EMI suppression. The device contains an extended junction to reduce the capacitor effect of the junction and improve its performance at low currents. The diode operates by utilizing the Zener breakdown mechanism, which helps to prevent damage to the diode and provides reliable voltage regulation for low current applications.

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