Allicdata Part #: | DF3A3.6FU(TE85LF)TR-ND |
Manufacturer Part#: |
DF3A3.6FU(TE85L,F) |
Price: | $ 0.05 |
Product Category: | Circuit Protection |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TVS DIODE 1VWM USM |
More Detail: | N/A |
DataSheet: | DF3A3.6FU(TE85L,F) Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04413 |
6000 +: | $ 0.03837 |
15000 +: | $ 0.03262 |
30000 +: | $ 0.03069 |
75000 +: | $ 0.02878 |
Voltage - Clamping (Max) @ Ipp: | -- |
Supplier Device Package: | USM |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Capacitance @ Frequency: | 110pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | -- |
Current - Peak Pulse (10/1000µs): | -- |
Series: | -- |
Voltage - Breakdown (Min): | 3.4V |
Voltage - Reverse Standoff (Typ): | 1V |
Unidirectional Channels: | 2 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DF3A3.6FU(TE85L,F) TVS-diodes are used as a surge protection device to help protect sensitive electronic equipment or systems. They have been designed to quickly respond and suppress transient overvoltage to prevent them from damaging devices. They help to SHR (suppress high-frequency ringing) on interfaces and telecom lines, as well as suppress common mode current transients.
Main applications for these devices are communication lines, such as ISDN lines, home plug applications, RJ-45 interfaces, modems, audio equipment, and data transmission lines. They are widely used in a variety of digital and electronic applications and offer protection against overvoltage and ESD (electrostatic discharge).
DF3A3.6FU (TE85L,F) diodes are designed to clamp the voltage to a preset limit. The clamping voltage is a function of the voltage across the diode and the diode\'s capacitance. When the peak voltage exceeds the zener breakdown voltage, the diode conducts and current is conducted through the diode. This current is quickly discharged and the diode then returns to its non-conducting state.
The diode can stay conducting for a proportional amount of time, allowing the device to absorb the energy generated by the surge or transient. This energy is then dissipated as heat in the diode.
DF3A3.6FU (TE85L,F) diodes have a low clamping voltage, typically 2.5V to 5V, and are also optimized for high speed data transmission. They can also be used as a driver substrate in applications where high-voltage isolation is necessary. The current rating is usually between 400mA to 800mA and the peak pulse power typically ranges from 400 W to 800 W.
One feature that sets DF3A3.6FU (TE85L,F) diodes apart from other devices is their low voltage drop and low reverse-reaction. This feature is especially important in high frequency applications, as it improves signal quality and reduces signal loss. The low voltage drop and low reverse-reaction also make these diodes ideal for use in low-voltage devices, such as battery-operated devices.
In summary, the DF3A3.6FU (TE85L,F) TVS-diodes are designed to quickly respond and suppress transient overvoltage and ESD events. They offer an optimal solution for a range of applications, including communication lines, data transmission lines, ISDN lines, audio equipment, and more. These devices feature a low clamping voltage, fast response time, low voltage drop, and low reverse-reaction. They are ideal for battery powered devices, high frequency applications, and driver substrate applications.
The specific data is subject to PDF, and the above content is for reference
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