DF6F6.8MTU,LF Circuit Protection |
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Allicdata Part #: | DF6F6.8MTULFTR-ND |
Manufacturer Part#: |
DF6F6.8MTU,LF |
Price: | $ 0.08 |
Product Category: | Circuit Protection |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TVS DIODE 5V 24V UF6 |
More Detail: | N/A |
DataSheet: | DF6F6.8MTU,LF Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.07025 |
6000 +: | $ 0.06635 |
15000 +: | $ 0.06049 |
30000 +: | $ 0.05659 |
Voltage - Clamping (Max) @ Ipp: | 24V |
Supplier Device Package: | UF6 |
Package / Case: | 6-SMD, Flat Leads |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Capacitance @ Frequency: | 0.6pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | Yes |
Power - Peak Pulse: | -- |
Current - Peak Pulse (10/1000µs): | 2.5A (8/20µs) |
Series: | -- |
Voltage - Breakdown (Min): | 6V |
Voltage - Reverse Standoff (Typ): | 5V (Max) |
Unidirectional Channels: | 4 |
Type: | Steering (Rail to Rail) |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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DF6F6.8MTU is a type of Transient Voltage Suppressor (TVS) diode. It is a highly reliable semiconductor component that is commonly used in circuit protection applications. The diode applies a voltage clamping effect to limit voltage and provide effective protection against electrical transients, such as ESD, EFT, and electrical surge events.
DF6F6.8MTU is a semiconductor diode that has a reverse breakdown voltage of 6.8V. It is constructed from a substrate-less structure which is highly flexible and can effectively suppress transient voltages that occur during circuit operation. The device has a very low junction capacitance and can handle high transients when working with reverse polarity voltage.
A DF6F6.8MTU provides maximum protection against slow and rapid voltage transients. In cases where the transient exceeds the specified diode reverse breakdown voltage, the diode will break down allowing electrical current to pass through, thereby limiting the voltage. This also creates a protective path for the overvoltage state which helps to reduce damage to the system. The diode will also absorb electrical surges and short out the system in the event of an overload or electrical spike.
DF6F6.8MTU is commonly used in automotive, industrial, communication, electronic device, appliance, and aerospace applications. It can be used in various types of applications, such as DC power distribution, hybrid electric vehicle power systems, engine control systems, auxiliary power systems, and system monitoring applications. The device can be used to protect circuits from electrical surge, ESD, EFT, and other transient events.
DF6F6.8MTU also offer high reliability and performance. Its substrate-less structure provides added protection against electrical transients, while its low junction capacitance ensures minimal interference with the high frequency signals. Additionally, the device provides excellent clamping performance and is capable of withstanding high transients without degrading its performance.
In conclusion, DF6F6.8MTU is an effective and reliable TVS diode that can be used in a variety of applications. It provides maximum protection against electrical transients, while offering high levels of reliability and performance. The device is highly flexible, allowing it to be used in various types of circuit protection applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DF6F6.8MCTC(TE85L) | Toshiba Semi... | 0.51 $ | 4990 | TVS DIODE 5V 24V CST6C |
DF6F6.8MTU,LF | Toshiba Semi... | 0.08 $ | 3000 | TVS DIODE 5V 24V UF6 |
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