DF80R12W2H3_B11

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DF80R12W2H3_B11 Application Field and Working Principle

DF80R12W2H3_B11 is an insulated gate bipolar transistor (IGBT) module developed by Infineon. IGBTs are semiconductor devices that combine the best features of MOSFETs and bipolar transistors, combining fast switching of MOSFETs with the high-current handling capability of bipolar transistors. The DF80R12W2H3_B11 module is well-suited for a wide variety of industrial applications, stand-alone and distributed power electronics, and motor control.

Device Structure

The DF80R12W2H3_B11 module is built around a common substrate featuring an Infineon IGBT die. Each device consists of an IGBT with a super junction field-stop diode mounted to a heavy copper substrate. The IGBT has a high turn-off blocking capability, low on-state voltage drop, low switching losses, and fast switching times. The diode has a low forward voltage drop, and a high di/dt capability. The module features an isolated power package with a large heat sink that provides excellent thermal management.

Applications

The DF80R12W2H3_B11 module is widely used in a variety of industrial applications, such as motor control, renewable energy, power supplies, UPS, and inverters. The module is particularly well-suited to stand-alone and distributed power electronics, and motor control applications, due to its high current handling ability, low on-state voltage drop, and fast switching times.

Working Principle

The DF80R12W2H3_B11 module consists of an IGBT and a super junction field-stop diode. When the module is connected to a source of power, the IGBT turns on and the diode turns off. The IGBT acts as a switch, controlling the flow of current between the power source and the load. When the IGBT is off, the diode conducts the current from the power source to the load. When the IGBT is on, the diode acts as a short circuit, preventing current from reaching the load.

The IGBT is controlled by a gate voltage, with a low gate voltage turning the IGBT off and a high gate voltage turning it on. By controlling the gate voltage, it is possible to vary the amount of current flowing through the device, allowing it to be used to control the speed and power of motors.

The diode is also controlled by the gate voltage, but in the opposite way. When the gate voltage is low, the diode is on and the IGBT is off; when the gate voltage is high, the diode is off and the IGBT is on.

Conclusion

The DF80R12W2H3_B11 module is an IGBT module developed by Infineon. It consists of an IGBT and a super junction field-stop diode, and is well-suited for a wide range of industrial applications, stand-alone and distributed power electronics, and motor control. The IGBT is controlled by a gate voltage, while the diode is controlled in the opposite way. By controlling the gate voltage, it is possible to vary the amount of current flowing through the device, allowing it to be used to control the speed and power of motors.

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