DF80R12W2H3FB11BPSA1 Allicdata Electronics
Allicdata Part #:

DF80R12W2H3FB11BPSA1-ND

Manufacturer Part#:

DF80R12W2H3FB11BPSA1

Price: $ 49.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD DIODE BRIDGE EASY1B-2-1
More Detail: IGBT Module Trench Field Stop Half Bridge 1200V 20...
DataSheet: DF80R12W2H3FB11BPSA1 datasheetDF80R12W2H3FB11BPSA1 Datasheet/PDF
Quantity: 1000
15 +: $ 45.20170
Stock 1000Can Ship Immediately
$ 49.73
Specifications
Series: EconoPACK™2
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 20A
Power - Max: 20mW
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 2.35nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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DF80R12W2H3FB11BPSA1 is an insulated-gate bipolar transistor (IGBT) module produced by Infineon. It offers a high-performance power switch that can be used in a wide range of modern industrial and commercial applications, from electric mobility to digital control systems. In this article, we will look at the application field, features and working principle of the DF80R12W2H3FB11BPSA1.

The DF80R12W2H3FB11BPSA1 is a popular choice for motor control and electric power conversion, making it an ideal choice for applications such as electric mobility, electronic motor control, and robotics. It is also suitable for high-frequency switching and medium power applications, as well as AC/DC and DC/DC converters, drives and energy conversion.

The module is made up of 12 IGBT chips held in an insulated package, which is capable of handling 800A of continuous current while withstanding a voltage of 1200V. The module is able to provide higher currents with better efficiency and lower losses. It is also able to operate at a wide temperature range, from -40°C to 175°C.

The DF80R12W2H3FB11BPSA1 provides short-circuit protection as well as active current and temperature protection, making it a safe choice for industrial and commercial applications. Its high-speed switching features allow for higher frequency operation for a more reliable system. The module is also capable of operating in any switching mode, further increasing its range of applications.

The DF80R12W2H3FB11BPSA1 features a wide gate current range, from 4A to 80A, as well as a wide gate voltage range, from 0V to 15V, providing flexibility in the use of the module. The module also has a very fast switching speed with a typical turn-on time of 30ns and typical turn-off time of 6ns.

The working principle of the DF80R12W2H3FB11BPSA1 is based on the principle of switched integration - the IGBT module switches between high and low states to control power flow. The on-state of the IGBT module is enabled by applying a voltage to the gate which causes the collector current to flow. When the gate voltage is removed, the IGBT module turns off, preventing any current from flowing.

In conclusion, the DF80R12W2H3FB11BPSA1 is an IGBT module designed for electric power conversion and high-frequency switching applications. It offers a wide range of features, such as short-circuit protection, active current and temperature protection, high-speed switching, as well as wide gate voltage and current ranges. This makes it an attractive choice for industrial and commercial applications. Ultimately, the module operates using the principle of switched integration, enabling the switching of power flow to control currents.

The specific data is subject to PDF, and the above content is for reference

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