DI9956T Discrete Semiconductor Products

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A DI9956T is an insulated-gate, complement bipolar transistor (IGBT) module. It is a compact package containing two IGBTs, along with integrated anti-parallel diodes. This device is designed to provide greater efficiency, power density, and flexibility in applications requiring medium power and a stable on-state voltage. This makes the DI9956T a suitable choice for use in medium-power motor drives, uninterruptible power supplies, and inverters.

The DI9956T is a unique device in that it is constructed of two independent IGBTs and integrated anti-parallel diodes in a single package. The IGBTs use insulated gate technology to provide high-current switching, while the anti-parallel diodes provide reverse-current protection.

The two IGBTs are connected such that the output of one is connected to the gate of the other, creating an array of transistors. This array allows for more efficient switching and more flexible control. The diode array also provides a low voltage drop when the IGBT is turned off, allowing for more efficient power transition. The DI9956T also has a built-in short-circuit protection feature, which limits current flow and helps reduce the risk of damage or malfunction during operation.

The DI9956T incorporates a wide range of operating temperature and can handle a wide range of electrical stress. This device can handle up to 600 volts, and can withstand repeated surge currents in excess of 500 amps. The power dissipation of the device is also very low and it is designed to maintain a low on-state resistance for stable operation. The device is also able to handle power very efficiently, with a current density of up to 8.5 amps/cm2.

In terms of its working principle, the DI9956T is an insulated-gate, complementary bipolar transistor (IGBT) module. When the DI9956T is turned on, the gate voltage increases, allowing the current to flow through the IGBTs. When turned off, the negative gate voltage keeps the IGBTs off, thereby blocking current flow. The integrated anti-parallel diodes protect the device from the effects of reverse current. With its high switching speed, low on-state voltage, and ability to handle high current, the DI9956T is an efficient and reliable choice for medium-power applications.

In summary, the DI9956T is an insulated-gate, complementary bipolar transistor (IGBT) module that offers a wide range of features and efficient performance. The unique array of transistors and integrated diode array protect the device from reverse current, allowing for more efficient power transitions and greater flexibility. With its capability to handle voltage and current surges, low on-state resistance, and low power dissipation, the DI9956T is an ideal choice for applications requiring medium-power switching.

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