DIMD10A-7 Allicdata Electronics

DIMD10A-7 Discrete Semiconductor Products

Allicdata Part #:

DIMD10A-7DITR-ND

Manufacturer Part#:

DIMD10A-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN/PNP PREBIAS 0.3W SC74R
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: DIMD10A-7 datasheetDIMD10A-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms, 100 Ohms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74R
Description

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DIMD10A-7 is a pre-biased, bipolar junction transistor (BJT) array. It is a three-terminal device that combines two NPN and two PNP transistors into a single, package for improved and dependability for use in electronic circuits. This type of BJT array requires fewer connections to the power supply, meaning that it can be easily integrated into a variety of electronic circuit designs. The DIMD10A-7 is capable of providing good performance at currents ranging from 500mA to 1.5A. It is also able to maintain a high level of power integrity and reliability over a wide range of operating conditions.

The working principle of a DIMD10A-7 is fairly simple. The device consists of two NPN transistors and two PNP transistors connected in series. When the base-emitter voltage of one of the NPN transistors is applied to the gate, the other NPN transistor is forward biased and the PNP transistors are reverse-biased. This causes the device to function as a switch. When the base-emitter voltage is removed from the gate, the device switches off and all four transistors are reverse-biased, preventing current from flowing.

The DIMD10A-7 is capable of providing maximum collector-emitter voltages of up to 80V and a power dissipation of up to 5W. Its robust construction and high voltage capacitance make it suitable for applications requiring high levels of performance in high power, high temperature environments. It is also ideal for use in automotive, consumer electronics and industrial systems where high reliability is essential.

The DIMD10A-7 is most commonly used in applications where very high current is needed and space is at a premium. It is often used as a power switch in digital circuits, controlling the current flow from a battery to the load. It is also used in digital signal processing (DSP) and analog circuits and as a driver for high power, high voltage devices. It can also be used in power supply systems to provide current control and protection.

In addition to its power switching capabilities, the DIMD10A-7 can be used as a low-noise amplifier. Thanks to its three-terminal construction, the DIMD10A-7 can provide a high input impedance, low bias current and a low power dissipation. This makes it well suited for use in low-gain, low-noise amplifiers.

Overall, the DIMD10A-7 provides a reliable, high-performance solution for applications requiring high levels of power control and protection. It is also suitable for use in a wide range of environments and can be easily integrated into a variety of circuit designs. Its low noise properties also make it well suited for use as a low-noise amplifier.

The specific data is subject to PDF, and the above content is for reference

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