Allicdata Part #: | DL4740A-TPMSTR-ND |
Manufacturer Part#: |
DL4740A-TP |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE ZENER 10V 1W MELF |
More Detail: | Zener Diode 10V 1W ±5% Surface Mount MELF |
DataSheet: | DL4740A-TP Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.06185 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 1W |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 7.6V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF |
Supplier Device Package: | MELF |
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Diodes - Zener - Single, like DL4740A-TP, are an important type of semiconductor device which operate based on the principle of a voltage-controlled current source. A zener diode is a type of reverse-biased semiconductor diode which, when connected in reverse bias, exhibits a voltage-controlled current source that reduces to a value inversely proportional to the applied forward voltage. The operation of the diode is largely determined by the material used, in combination with the doping processes used to create the desired electrical characteristics.
The DL4740A-TP is a silicon Zener diode with a maximum reverse voltage of 4.7 V and a maximum forward current rating of 40 mA. The device has a low dynamic resistance, making it suitable for general-purpose use in applications including voltage regulation and protection circuits. The device is also widely used in applications where stable operation is required over a wide range of temperatures and voltages, including industrial and automotive electronics.
The working principle of the DL4740A-TP is explained by the fact that, when connected in reverse bias, the diode\'s diode junction exhibits a voltage-controlled current source. This means that as the voltage across the p-n junction increases, the current sourced by the diode also increases. As the voltage continues to increase, the electric field strength across the junction also increases, eventually causing the diode to break down and enter a Zener voltage region. As the voltage across the diode is further increased, the Zener breakdown voltage of the device remains the same, allowing it to operate in a voltage source mode and remain stable.
The voltage dependent breakdown mechanism of the DL4740A-TP has several additional features which make it an ideal choice for a variety of applications. For example, the device has a temperature coefficient of +0.015% per degree centigrade which allows it to maintain its breakdown voltage over a wide temperature range of -65°C to 150°C. Additionally, the device also has surge current capability of up to 2A, which increases its suitability for use in load switches and transient protection.
In terms of applications, the DL4740A-TP is commonly used in industrial and automotive electronics, such as automotive power supply circuits and battery charging systems, as well as voltage regulators. The device is also used in a variety of electronic circuits, such as clamping circuits, reverse bias circuits and other overvoltage protection circuits. Its low dynamic resistance and excellent surge capability also make it an ideal choice for transient protection applications.
In conclusion, the DL4740A-TP is a silicon Zener diode with a maximum reverse voltage of 4.7 V and a maximum forward current rating of 40 mA. Its voltage dependent breakdown mechanism, combined with its low dynamic resistance, temperature coefficient and surge current capability, make it an ideal choice for a variety of applications, such as automotive electronics, industrial electronics and transient protection.
The specific data is subject to PDF, and the above content is for reference
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