DMB53D0UDW-7 Allicdata Electronics

DMB53D0UDW-7 Discrete Semiconductor Products

Allicdata Part #:

DMB53D0UDWDITR-ND

Manufacturer Part#:

DMB53D0UDW-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NMOS+NPN TRANS SOT-363
More Detail: Transistor General Purpose NPN, N-Channel 45V NPN,...
DataSheet: DMB53D0UDW-7 datasheetDMB53D0UDW-7 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, N-Channel
Applications: General Purpose
Voltage - Rated: 45V NPN, 50V N-Channel
Current Rating: 100mA PNP, 160mA N-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Base Part Number: DMB53D0U
Description

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Transistors - Special Purpose

Application Field

The DMB53D0UDW-7 is a special bipolar transistor developed by Fairchild Semiconductor. It is a small Hermetic package that contains a small array of three silicon diodes in a single-package body. The device is used in portable applications where small size and low power consumption is an initial concern. It can be used to provide switching, voltage level shifting and other functions in various portable and computer applications.

The device is most commonly used to improve the performance and battery life of portable and mobile devices such as laptop computers and mobile phones. It is designed to provide a very low forward voltage drop, low stray capacitance and a low off current when compared with other devices. This makes it suitable for use in a wide range of low power devices and is especially useful in the development of low-power digital circuits.

The DMB53D0UDW-7 can also be used to provide multiple voltage levels and can be used to replace diodes in order to reduce the amount of digital logic components used. This can be beneficial when considering the overall power consumption of a device as the lower number of components results in lower power consumption.

Working Principle

The working principle of the DMB53D0UDW-7 transistor is the same as the rest of bipolar transistors. It is a type of field effect transistor and operates on the principle of total refraction. When a small amount of current is applied to the base of the transistor, an enhanced electric field is created and the current flowing through the device is amplified. This process is known as total refraction.

When the base current is removed, the electric field dissipates and the current flow stops. This action can be reversed if a reverse current is applied to the device, allowing it to be used for switching and for voltage level shifting. The total refraction process makes the DMB53D0UDW-7 transistor an ideal solution for low power devices.

The device also includes an integral junction on the silicon diodes and this junction serves to limit the amount of leakage current available, providing a further reduction in power consumption. The junction also serves to reduce the amount of time required for the device to reach a steady state when being switched on or off.

The specific data is subject to PDF, and the above content is for reference

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