DMB53D0UV-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMB53D0UVDITR-ND |
Manufacturer Part#: |
DMB53D0UV-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET NMOS+NPN TRANS SOT-563 |
More Detail: | Transistor General Purpose NPN, N-Channel 45V NPN,... |
DataSheet: | DMB53D0UV-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, N-Channel |
Applications: | General Purpose |
Voltage - Rated: | 45V NPN, 50V N-Channel |
Current Rating: | 100mA PNP, 160mA N-Channel |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Base Part Number: | DMB53D0U |
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The DMB53D0UV-7 is a kind of transistor of the special purpose category. It is sometimes referred to as a 500V Bipropellant Oxide Field Effect Transistor. Though this type of transistor is classed as special purpose, it does have a wide range of applications, as well as its primary working principle. This article attempts to outline the most common applications and the working principle of the DMB53D0UV-7.
The DMB53D0UV-7 is a vertical P-channel enhancement mode field effect transistor (FET) with a maximum drain current of 4.5A. This makes it suitable for use when higher currents are needed, and it also has a superior power density ratio when compared with other similarly sized P-channel FETs. It is also designed to operate at a maximum operating temperature of 200°C. It has a gate voltage of +2.5V and a breakdown voltage of 500V.
The applications of the DMB53D0UV-7 are based on its main use as a power switch, or control device. It can be used to control the flow of current through a circuit, acting as a switch in high power electrical systems. It is commonly found in motor, power inverter, and mobility applications. It can also be used in various kinds of lighting, where it acts as a high-power dimmer or switch.
As for the working principle of the DMB53D0UV-7, it is based on its construction as a vertical P-channel enhancement mode field effect transistor. The main purpose of this type of transistor is to act as a power switch, or control device. It acts by controlling the flow of current through two different circuits, one of which is the drain and the other being the source. The presence of a voltage applied to the gate of the transistor allows for the flow of current through the drain to the source, thereby allowing the transistor to act as a switch.
Another aspect of the working principle of the DMB53D0UV-7 is its bipolar operation, which allows it to serve as an inverter. This means that the polarity of the output can be reversed, in order to change the direction of current flowing through the circuit. This is typically useful for applications such as motor control, where the direction of the current needs to be changed quickly.
Finally, the final aspect of the working principle of the DMB53D0UV-7 is its voltage breakdown capability. This means that in the event of a voltage rise in the circuit, the device is designed to keep the current at a safe level, preventing any damage to the circuit or the components. This is especially useful when controlling high power circuits, as a sudden voltage rise can quickly cause damage to the components.
In conclusion, the DMB53D0UV-7 is a special purpose transistor designed for many applications. It has a wide range of applications based on its main use as a power switch, or control device. The working principle of the DMB53D0UV-7 is based on its construction as a vertical P-channel enhancement mode field effect transistor, as well as its bipolar operation and voltage breakdown capability. All of these features combine to make the DMB53D0UV-7 a versatile and reliable device for many critical applications.
The specific data is subject to PDF, and the above content is for reference
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