DME914C10R Allicdata Electronics
Allicdata Part #:

DME914C10RTR-ND

Manufacturer Part#:

DME914C10R

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN PREBIAS/PNP SSMINI6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: DME914C10R datasheetDME914C10R Datasheet/PDF
Quantity: 1000
8000 +: $ 0.07577
16000 +: $ 0.07088
24000 +: $ 0.06518
Stock 1000Can Ship Immediately
$ 0.08
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
Base Part Number: DME914C1
Supplier Device Package: SSMini6-F3-B
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 125mW
Frequency - Transition: 300MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Current - Collector (Ic) (Max): 100mA, 500mA
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DME914C10R is a type of pre-biased transistor array. It consists of 10 NPN transistors built into a single package, designed for use in applications such as amplifiers, drivers, and switching circuits. The transistors are low-noise, low-power versions of the common 2N3904 NPN transistors. The DME914C10R also features a common emitter configuration and integrated biais. This allows for easy design and connection of the circuit.

The integrated biais provides the circuit with exactly the amount of current needed to the transistors. This ensures optimal performance, as there is no need to adjust the current manually. The common emitter configuration provides amplification while preventing the transistor from becoming saturated.

Due to its low-noise, low-power design, and biaised transistor configuration, the DME914C10R is ideal for applications such as amplifiers, drivers, and switching circuits. It is also widely used in robotics, automation, and medical device applications. The DME914C10R is also well-suited for audio and video applications, where low-noise and low-power is desired.

In terms of its components and configuration, the DME914C10R is a very simple device. Each transistor consists of three terminals (collector, base, and emitter) and operates in a common emitter configuration. For bias, the device draws current from the integrated biais. This is done by connecting a regulated power supply to the Vc pin. Once these connections are made, the device is ready to use.

As previously mentioned, the DME914C10R is ideal for amplifier, driver, and switching applications. The common emitter configuration amplifies the input signal while ensuring that the transistors do not become saturated. Furthermore, the integrated bias ensures that the transistors are always operating in the linear region, so that performance is optimized. In addition, the use of low-noise and low-power transistors allows for higher-performance amplifier and driver applications.

Overall, the DME914C10R is a pre-biased transistor array that is well-suited for amplifier, driver, and switching applications. Its integrated bias provides controlled current to the transistors, allowing for optimal performance. In addition, the common emitter configuration preserves linearity and prevents transistor saturation. The low-noise, low-power design enhances overall circuit performance and make this pre-biased transistor array ideal for audio, video, robotics, automation, and medical device applications.

The specific data is subject to PDF, and the above content is for reference

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