
Allicdata Part #: | DME914C10RTR-ND |
Manufacturer Part#: |
DME914C10R |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN PREBIAS/PNP SSMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
8000 +: | $ 0.07577 |
16000 +: | $ 0.07088 |
24000 +: | $ 0.06518 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
Base Part Number: | DME914C1 |
Supplier Device Package: | SSMini6-F3-B |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 125mW |
Frequency - Transition: | 300MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V, 12V |
Current - Collector (Ic) (Max): | 100mA, 500mA |
Transistor Type: | 1 NPN Pre-Biased, 1 PNP |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DME914C10R is a type of pre-biased transistor array. It consists of 10 NPN transistors built into a single package, designed for use in applications such as amplifiers, drivers, and switching circuits. The transistors are low-noise, low-power versions of the common 2N3904 NPN transistors. The DME914C10R also features a common emitter configuration and integrated biais. This allows for easy design and connection of the circuit.
The integrated biais provides the circuit with exactly the amount of current needed to the transistors. This ensures optimal performance, as there is no need to adjust the current manually. The common emitter configuration provides amplification while preventing the transistor from becoming saturated.
Due to its low-noise, low-power design, and biaised transistor configuration, the DME914C10R is ideal for applications such as amplifiers, drivers, and switching circuits. It is also widely used in robotics, automation, and medical device applications. The DME914C10R is also well-suited for audio and video applications, where low-noise and low-power is desired.
In terms of its components and configuration, the DME914C10R is a very simple device. Each transistor consists of three terminals (collector, base, and emitter) and operates in a common emitter configuration. For bias, the device draws current from the integrated biais. This is done by connecting a regulated power supply to the Vc pin. Once these connections are made, the device is ready to use.
As previously mentioned, the DME914C10R is ideal for amplifier, driver, and switching applications. The common emitter configuration amplifies the input signal while ensuring that the transistors do not become saturated. Furthermore, the integrated bias ensures that the transistors are always operating in the linear region, so that performance is optimized. In addition, the use of low-noise and low-power transistors allows for higher-performance amplifier and driver applications.
Overall, the DME914C10R is a pre-biased transistor array that is well-suited for amplifier, driver, and switching applications. Its integrated bias provides controlled current to the transistors, allowing for optimal performance. In addition, the common emitter configuration preserves linearity and prevents transistor saturation. The low-noise, low-power design enhances overall circuit performance and make this pre-biased transistor array ideal for audio, video, robotics, automation, and medical device applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DME914C10R | Panasonic El... | 0.08 $ | 1000 | TRANS NPN PREBIAS/PNP SSM... |
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