| Allicdata Part #: | DMS935E10R-ND |
| Manufacturer Part#: |
DMS935E10R |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS ARRAY NPN/CCD SSMINI6 |
| More Detail: | Transistor CCD Output Circuits NPN, N-Channel 20V ... |
| DataSheet: | DMS935E10R Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN, N-Channel |
| Applications: | CCD Output Circuits |
| Voltage - Rated: | 20V NPN, 40V N-Channel |
| Current Rating: | 50mA NPN, 10mA N-Channel |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | SSMini6-F3-B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMS935E10R is a special-purpose transistor used in applications that require high power, high temperature operation. It is especially suited to industrial applications, where it is able to reliably handle large currents and temperatures that are beyond the range of conventional transistors. In addition, its ability to handle high current and temperature makes it useful in high-power switching applications, such as power switching, motor control, and other power management.
The DMS935E10R is a PNP bipolar transistor with an NPN collector-base junction and a PNP emitter-base junction. It is constructed in a through-hole package with a metal can for enhanced thermal performance. The DMS935E10R features a maximum collector-base voltage of 200V, a maximum collector current of 8A, and a maximum power dissipation of 150W. Its thermal resistance is rated at 8.67°C/W.
The DMS935E10R is designed to operate in a linear region of operation. The key to successful operation in a linear region is to maintain the base voltage at the ideal level to ensure efficient power transfer. The transistor\'s base voltage should be kept at 0.6V to ensure optimal operation. If the base voltage is too low, the transistor will be less efficient; if the base voltage is too high, the transistor could be damaged. In addition, the base voltage should be monitored and controlled to ensure the device is not exposed to excessive power dissipation, which will reduce its lifetime.
The DMS935E10R is suited for use in high power and high temperature applications. It is ideal for use in applications that require a very large amount of current, such as power switching and motor control. Its ability to handle high current and temperature makes it useful for high-power switch applications, such as power converters and power-supply regulators. In addition, its low package cost and its high power rating make it ideal for high-volume production.
The DMS935E10R is a reliable device that is well-suited to industrial applications. It is able to handle high temperatures and large currents without fail and its thermal resistance makes it suitable for high-power switching applications. Its relatively low package cost and its high power rating also make it an attractive choice for high-volume production.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| DMS935E20R | Panasonic El... | -- | 1000 | TRANS ARRAY NPN/CCD SSMIN... |
| DMS935E10R | Panasonic El... | -- | 1000 | TRANS ARRAY NPN/CCD SSMIN... |
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
DMS935E10R Datasheet/PDF