DMS935E20R

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMS935E20R is a high-performance transistor designed specifically for a variety of specialized applications that require high-switching speed, low-noise, and low-distortion performance. Its design is optimized for pulse duty-cycles up to 50%, providing excellent spectral purity, stable small signal operation, and exceptional accuracy. It has a wide range of switching power capabilities, with a nominal rating of 40A (max) and a breakdown voltage of 180V (min). The DMS935E20R is ideal for use in applications that require quick and reliable switching, such as RF relays, motor control, and audio amplifiers.

The DMS935E20R is a MOSFET device with an N-channel construction and high-speed switching capability. It is constructed of two silicon nitride layers, which provide excellent isolation and high-speed performance. The lower layer acts as a base, while the upper layer acts as a gate. The electrical connection between the two layers is made via an insulated-gate transistor structure that utilizes a PN-junction. The PN-junction is also used as an input. The N-channel construction enables the device to be operated with either a positive or a negative voltage.

The DMS935E20R has extremely low on-state leakage current and a very low dynamic resistance. The device has a very low Rds(on) of 8.4mΩ, which helps to reduce the power dissipation of the device. In addition, the device has very high junction temperature and collector-emitter breakdown voltages, making it suitable for a wide range of applications. The device is commonly used in RF applications, such as amplifier stages, modulators, regulators, and amplifiers.

The basic operating principle of the DMS935E20R transistor is quite simple. When a positive voltage is applied to the gate terminal, the electron channels open up, allowing current to flow through the device. This creates an N-channel device which then blocks current from flowing through the collector to the emitter. When the voltage applied to the gate is removed, the device is switched off and no current passes through the collector-emitter path.

The DMS935E20R is a versatile device that can be used in a variety of applications where a high-speed transistor is needed. Its small size and low power consumption make it ideal for use in portable electronic devices and in motor control circuits. Its low operating temperature and high switching speed enable it to be used in RF amplifiers, RF relays, motor controls, and audio amplifiers.

In conclusion, the DMS935E20R is a high-performance transistor designed specifically for applications that require high-switching speed and low-noise, low-distortion performance. Its N-channel construction, high-speed switching capability, low on-state leakage current, and Rds(on) of 8.4mΩ make it suitable for a wide range of applications. Its small size and low power consumption make it suitable for use in portable devices, while its high operating temperature and breakdown voltages make it ideal for use in RF amplifiers, RF relays, and motor controllers.

The specific data is subject to PDF, and the above content is for reference