DN0150BLP4-7 Discrete Semiconductor Products |
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Allicdata Part #: | DN0150BLP4-7DITR-ND |
Manufacturer Part#: |
DN0150BLP4-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 50V 0.1A X1-DFN1006-3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 60MHz 450mW... |
DataSheet: | DN0150BLP4-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 450mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-XFDFN |
Supplier Device Package: | X2-DFN1006-3 |
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The DN0150BLP4-7 transistor is part of the family of single bipolar junction transistors (BJT). A bipolar junction transistor is a semiconductor device (a type of transistor) composed of three terminals connected to different semiconductor regions. It is an active device with three separate terminals, labeled base, collector and emitter, which can allow current to flow between them.
These transistors are widely used in applications such as amplifiers, switches, circuit protection and signal processing. They are also used as interface elements in integrated circuit design, allowing the pins of integrated circuits to interact with each other. The DN0150BLP4-7 transistor is capable of working at power levels of 10 to 30 volts and up to 0.45 amp (collector current) or a maximum collector-emitter voltage of 80 volts. It is also capable of controlling up to 3 amperes of collector current.
The working principle of a DN0150BLP4-7 transistor can be explained in terms of the following three terminal connections: the base, collector, and emitter. When the base is connected to a positive voltage, current flows between the collector and emitter terminals, thereby allowing the transistor to act as an amplifier, switch or dependence controller. When the base receives a negative voltage, the current flow is stopped, thereby shutting off the transistor’s function. In essence, the transistor can act as an electronic switch, allowing or blocking the flow of current and controlling the circuits that use it.
The collector-emitter voltage and collector power dissipation are two other parameters that are important when considering an application for the DN0150BLP4-7 transistor. The maximum collector-emitter voltage that can be used is 80 volts and the maximum power dissipation is 260mW. The maximum Collector current is limited to 3 amperes and the maximum voltage between collector and base should not exceed 12 volts. It is important to note that all these values are at room temperature and the transistor may not be able to withstand the maximum values if heated.
In conclusion, the DN0150BLP4-7 transistor is part of the family of single bipolar junction transistors (BJT). It is ideal for use in applications such as amplifiers, switches, circuit protection and signal processing. It can work at power levels of 10 to 30 volts and up to 0.45 amperes collector current. It has a maximum collector-emitter voltage of 80 volts but can only control up to 3 amperes of collector current at a time. The maximum voltage between collector and base should not exceed 12 volts.
The specific data is subject to PDF, and the above content is for reference
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