DN0150BLP4-7B Discrete Semiconductor Products |
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Allicdata Part #: | DN0150BLP4-7BDITR-ND |
Manufacturer Part#: |
DN0150BLP4-7B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 50V 0.1A DFN1006H4-3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 60MHz 450mW... |
DataSheet: | DN0150BLP4-7B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 450mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-XFDFN |
Supplier Device Package: | X2-DFN1006-3 |
Base Part Number: | DN0150 |
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The DN0150BLP4-7B is a single-transistor bipolar junction transistor (BJT), used in many different types of analog and digital applications. A BJT is a three-terminal device, which means it has a base, collector and emitter. The BJT is one of the most widely used transistor structures, and it has a variety of applications, including in amplifiers, oscillators, drivers, switches, and voltage regulators. This article will discuss the application field and working principle of the DN0150BLP4-7B.
The DN0150BLP4-7B is a PNP type transistor, meaning its base is positive and its collector and emitter are negative. It is classed as a general purpose transistor and can be used for many different types of switching and power application. It also has a high current rating, meaning it can handle high voltages and currents without damaging the device.
The most common applications for the DN0150BLP4-7B include general purpose switching and amplifying applications, as well as voltage and current regulators. In switching applications, the device is used to control the flow of electricity by turning it on and off. In amplifying applications, the device amplifies low-level electrical signals, such as radio frequencies or sounds, to control the current and voltage in circuits. Finally, in voltage and current regulators, the device is used to limit the amount of electricity that is flowing in a circuit. The main advantage of the device is its low insertion loss, meaning it does not significantly impact the circuit\'s voltage and current levels.
The working principle of the DN0150BLP4-7B is based on the theory of biasing. Bias is the control of the current and voltage passing through a transistor. When the device is biased correctly, it will amplify or switch the power passing through the circuit. In the case of the DN0150BLP4-7B, the base-emitter junction acts as the voltage divider network, allowing it to control the current in the circuit. The collector-base junction acts as the current generator, and the base-emitter junction acts as the voltage regulator. Bias is established when a voltage is placed across the base-emitter junction.
The DN0150BLP4-7B can be used in both analog and digital applications. In analog applications, it can be used to amplify the voltage or current passing through a circuit. In digital applications, it can be used as a switch to control the flow of electricity from one point to another. For example, the device can be used to switch between low and high voltage states in a circuit, allowing it to be used for logic gates and switches.
In summary, the DN0150BLP4-7B is a single-transistor bipolar junction transistor (BJT) used in many different types of analog and digital applications. It is a PNP type device and can be used for general purpose switching and amplifying applications, as well as voltage and current regulators. The main advantage of the device is its low insertion loss, meaning it does not significantly impact the circuit\'s voltage and current levels. Its working principle is based on the theory of biasing, in which the base-emitter junction acts as the voltage divider network and the collector-base junction acts as the current generator.
The specific data is subject to PDF, and the above content is for reference
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