DN2625DK6-G

The DN2625DK6-G is an array of N𫄰 Mosfet transistors designed for switching and amplification applications. It has a low on-resistance of 18 ohms, a drain-source breakdown voltage of 40 volts, and a gate-source threshold voltage of 5.3 volts. The DN2625DK6-G can be used in motor controls, power supplies, and audio applications.The DN2625DK6-G array is made up of multiple N𫄰MOS transistors on the same silicon chip. The transistors are connected in a series/parallel arrangement, with each transistor having its own gate, drain, and source contacts. This arrangement allows for higher power switching capability, improved linearity, and higher efficiency.The DN2625DK6-G is a versatile and reliable array for a variety of applications. In motor control applications, it can be used to control the speed and direction of motors. It can also be used in power supply switching applications, where it can switch varying loads between two voltage levels. In audio applications, the DN2625DK6-G can be used as an amplifier to provide better sound quality.The working principle behind the DN2625DK6-G is simple but effective. When applying a voltage to the array’s gate contact, it produces a field-effect in the drain-source channel of the transistor. This field-effect increases the current between the drain and the source, producing a desired result depending on the circuit\'s configuration.The DN2625DK6-G array is a useful tool for many types of electronic circuits. It is robust and reliable, and is easy to use in a variety of applications. Whether it is used for motor control, power supply switching, or audio amplification, the DN2625DK6-G can provide a reliable solution for many switching or amplification needs.

DN2625DK6-G	Microchip Te...	1.78 $	1030	MOSFET 2N-CH 250V 1.1A 8V...
DN2625K4-G	Microchip Te...	0.67 $	6000	MOSFET N-CH 250V 1.1A 3DP...
E3FA-DN26	Omron Automa...	50.65 $	1000	INFRARED M18 PLSTC 1M NPN