DRC3123E0L

Resistor - Emitter Base (R2):	2.2 kOhms
Base Part Number:	DRC3123
Supplier Device Package:	SSSMini3-F2-B
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	100mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	6 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The DRC3123E0L is a Pre-Biased Single Bipolar Transistor (BJT) device. It is developed through the latest bipolar transistor technologies and is a good option for meeting the application needs in various fields. In this article, the application field and working principle of the DRC3123E0L will be examined.

Application field

The pre-biased single bipolar transistor (BJT) can be used in a variety of applications, ranging from low-noise amplifiers to voltage regulators. They are primarily used in power applications, but can also be used in audio amplifier circuits.The DRC3123E0L is designed for use in audio power amplifier applications, providing low output noise and excellent gain. It is also designed for use in low-noise amplifier applications and voltage regulators. The device is especially useful for audio-related applications, as the noise it can produce is extremely low.It is also suited for use in high-frequency power supply applications, such as switching mode power supplies (SMPS). This is because of its low input capacitance and fast turn-on/turn-off times.In addition to these applications, the DRC3123E0L can also be used in other applications, such as analog circuits and radio-frequency (RF) amplifiers.

Working principle

The DRC3123E0L works by allowing current to pass through it when it is biased in the "on" state. In the "off" state, the c-e junction of the BJT is reverse biased.The way in which the device operates is based on the principles of bipolar junction transistors. A bipolar junction transistor has three terminals: the base, the collector, and the emitter. The base and collector are connected to the external circuit, while the emitter is internally connected to either ground or an internal voltage source.When the base-emitter junction is forward biased, holes and electrons flow through the base-emitter junction, creating an inversion layer. This inversion layer can be used to control the collector current. When the inversion layer is depleted, the collector current goes to zero and the BJT is in the "off" state.When the base-emitter junction is reverse biased, the collector current is the same as the base current. This allows for the device to be pre-biased, making it a great option for use in applications such as low-noise amplifiers, voltage regulators, and power supplies.

Conclusion

The DRC3123E0L is a pre-biased single bipolar transistor (BJT) device that can be used in a variety of applications. It is designed for low-noise amplifier, power amplifier, and power supply applications, providing excellent gain and low output noise. The device works by allowing current to pass through it when it is biased in the "on" state, and by not passing current when the base-emitter junction is reverse biased. This allows it to be used in applications such as low-noise amplifiers, voltage regulators, and RF amplifiers, making it a great option for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description