DRC3143T0L Allicdata Electronics

DRC3143T0L Discrete Semiconductor Products

Allicdata Part #:

DRC3143T0LTR-ND

Manufacturer Part#:

DRC3143T0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DRC3143T0L datasheetDRC3143T0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Base (R1): 4.7 kOhms
Base Part Number: DRC3143
Supplier Device Package: SSSMini3-F2-B
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 100mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Series: --
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DRC3143T0L is a special-purpose transistor from the Single, Pre-Biased sub-category of Bipolar Junction Transistor (BJT). It is a device composed of three layers of semiconductors, commonly referred to as a ‘junction transistor’, and is used for a variety of different applications including switching and amplifying electronic signals.

The structure of this particular device consists of a narrow base of P-type semiconductor material which is sandwiched between two wider layers of N-type material, hence the term ‘bipolar’ transistor. In addition, built-in biasing resistors are incorporated into the device at the base and emitter terminals which allow the correct operation of the transistor without the need for additional external components.

When a positive voltage is applied to the base terminal of the transistor, it allows an electric current to flow from the emitter to the collector terminals when a small voltage is used. On the other hand, applying a negative voltage to the base terminal will block any current from entering the inner region. This ability to switch rapidly between conducting and non-conducting states at low voltages and currents makes transistors suitable for use in various applications.

The wide range of temperatures at which the DRC3143T0L can be operated makes it particularly suitable for use in various types of telecom applications due to its low thermal noise and its improved performance at high temperatures. It is also ideal for switching and amplification of RF signals, as well as for driving current in automotive and industrial circuits. In addition, it can be used as a low-noise input stage in high-precision analogue circuits, further enhancing its versatility.

The overall performance of this transistor is further enhanced by the fact that its biasing resistors allow the device to be pre-biased at a certain voltage level, thus improving its stability and allowing for operation at higher frequencies. Furthermore, the high breakdown voltage of this device is suitable for use in various high voltage applications, making it a useful and reliable component for a variety of different applications.

In conclusion, the DRC3143T0L transistor is a versatile and reliable three-layered bipolar junction transistor with integrated biasing resistors and a high breakdown voltage. It is ideal for use in various telecom applications due to its low thermal noise, as well as in RF switching and amplification circuits. Furthermore, its pre-biased design makes it suitable for use in high-frequency applications, further extending its potential uses. It is an economically efficient and reliable solution for a variety of tasks.

The specific data is subject to PDF, and the above content is for reference

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