DRC3114W0L Allicdata Electronics
Allicdata Part #:

DRC3114W0LTR-ND

Manufacturer Part#:

DRC3114W0L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DRC3114W0L datasheetDRC3114W0L Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04901
30000 +: $ 0.04585
50000 +: $ 0.04216
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B
Base Part Number: DRC3114
Description

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DRC3114W0L Application Field and Working Principle

The DRC3114WO0L is a single, pre-biased bipolar transistor (BJT) designed to handle a wide variety of applications, such as amplifiers, motor control and power switching. It is equipped with a number of features designed to handle the complexities of real-world applications and to make designing with it easier. In this article, we will discuss the application field of DRC3114WO0L and its working principle.

Application Field of DRC3114W0L

The DRC3114WO0L is primarily used for power applications such as power amplifiers, power switching and motor control. Its wide voltage range and high surge current capability make it ideal for these kinds of applications. Additionally, its PowerTrench MOSFET technology is designed to reduce power losses, resulting in higher efficiency. The device is also capable of handling high frequency switching and have a tight on-state resistance (RDS) matching across devices, which makes it suitable for high-frequency applications. Furthermore, the pre-biased design also offers temperature-compensated operation, meaning it can maintain good thermal performance in different ambient temperatures. This makes the device particularly suitable for automotive applications.

Working Principle of DRC3114W0L

The DRC3114WO0L utilizes a base-emitter voltage to operate, similar to typical BJTs. The base is connected to the bias voltage, which is typically derived from the power supply and current is supplied to the load through the collector and emitter connections. When the base-emitter voltage (Vbe) is greater than 0.7v, the base-emitter junction become forward biased and current can flow between the collector and emitter. This current is the output current of the device and it is determined by the base current. The base current is controlled by the base-emitter voltage, meaning that by controlling the voltage, the base current and output current of the device can be controlled.

The DRC3114WO0L also includes a number of other features, such as its high-voltage on-state resistance (RDSon) rating, which is lower than earlier technologies, and its low forward voltage drop (Vce). These two features make the device suitable for both high- and low-side applications. Furthermore, the pre-biased design allows for temperature-compensated operation, meaning it can maintain its good performance even in different ambient temperatures.

In conclusion, the DRC3114W0L is a single, pre-biased bipolar transistor (BJT) designed to handle a wide variety of applications, such as amplifiers, motor control and power switching. It utilizes base-emitter voltage to operate and is equipped with a number of features designed to handle the complexities of real-world applications and to make designing with it easier. Its pre-biased design also offers temperature-compensated operation, making it suitable for automotive applications.

The specific data is subject to PDF, and the above content is for reference

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