DRDNB16W-7 Allicdata Electronics
Allicdata Part #:

DRDNB16WDITR-ND

Manufacturer Part#:

DRDNB16W-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN/DIODE SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DRDNB16W-7 datasheetDRDNB16W-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DRDNB16
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Series: --
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 600mA
Transistor Type: NPN - Pre-Biased + Diode
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DRDNB16W-7 Pre-Biased Single Bipolar Transistor (BJT) is an ideal solution for low power amplifier applications. The DRDNB16W-7 is a discrete BJT solution with a collector-emitter breakdown voltage of 80 volts, and a current gain of 290. The device is a pre-biased single device, meaning the collector and the emitter have a built-in voltage of approximately 0.8V. This pre-biased voltage enables the device to influence or tailor the output waveform without a direct input signal.

The device is an NPN type of BJT and has a gain coefficient hFE of 270 to 310 when at a collector current of 10mA. The device will operate over a wide temperature range, -55 to +150 Celsius.

The DRDNB16W-7 has a maximum collector current of 500mA and a maximum collector-emitter voltage of 800V. The input impedance of the device is quite high, with a maximum of between 10K and 20K ohm.

The main advantage of the pre-biased single device over other single devices is that it has a built-in voltage which can be tailored to tailor the output waveform of the device. This makes it ideal for applications such as audio amplifiers, small signal amplifiers, media amplifiers and other applications where a flat output waveform is desired.

The device is capable of providing a good level of performance in its operating range. It can be used in higher power applications such as Medium-power amplifiers. As the device is prebiased, there is no need to apply a separate input voltage, making it a great cost-saving solution for many applications.

The DRDNB16W-7 Pre-Biased Single Bipolar Transistor (BJT) provides a versatile and reliable solution for low power amplifier applications. Its pre-biased voltage helps produce a flat output waveform, making it perfect for audio amplifiers, small signal amplifiers, media amplifiers and other similar applications. This device has a wide operating temperature range and is capable of operating in higher power applications. The pre-biased voltage helps make the device more cost-efficient and is ideal for any application where a flat output waveform is desired.

The specific data is subject to PDF, and the above content is for reference

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