DRDN005W-7 Discrete Semiconductor Products |
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Allicdata Part #: | DRDN005WDITR-ND |
Manufacturer Part#: |
DRDN005W-7 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 80V 0.5A SOT363 |
More Detail: | Bipolar (BJT) Transistor NPN + Diode (Isolated) 80... |
DataSheet: | DRDN005W-7 Datasheet/PDF |
Quantity: | 36000 |
3000 +: | $ 0.07547 |
6000 +: | $ 0.07089 |
15000 +: | $ 0.06632 |
30000 +: | $ 0.06083 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN + Diode (Isolated) |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | DRDN005 |
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The DRDN005W-7 is a single bipolar junction transistors (BJT) application. A bipolar junction transistor (BJT) is a type of transistor that relies on the contact between two types of semiconductor materials to work. It is composed of two differently doped and heavily doped regions of a single crystal. The heavily doped region of N-type semiconductor material that forms the base and the heavily doped region of P-type material that forms the collector and the lightly doped region of P or N material that forms the emitter, together constitute the bipolar junction transistor. This transistor is mainly used in small-signal amplification, switching, signal processing and many other applications.
The DRDN005W-7 utilizes n-type material as its base and p-type material as its collector. This means that the transistor is based on the principles of both n-and p-type conduction. The n-type is usually the more active of the two when it comes to conduction, meaning that it is more efficient and has a greater ability to move electrons. However, the drdn005w-7 still relies on both n-type and p-type conduction in order to perform properly.
The DRDN005W-7 is also configured with a resistor in the collector, which serves to regulate the current flow between the collector and the base. This prevents the transistor from becoming saturated and helps to ensure a constant level of current in the circuit. The resistor can be adjusted to achieve different current levels, allowing the user to control the circuit\'s performance. In addition, the DRDN005W-7 has a darlington pair configuration, meaning that the collector resistor is able to reduce the base current to a much lower level than other single junction transistors.
In terms of performance, the DRDN005W-7 has an excellent gain and frequency response. This makes it particularly reliable for signal processing and signal amplification applications. While it is not particularly fast, its superior gain still makes it a useful tool for many applications. Furthermore, the DRDN005W-7 also offers good noise immunity, which is a significant advantage in signal processing and signal amplification where noise can be a major problem.
The DRDN005W-7 is also quite versatile, meaning that it can be used in a wide variety of applications. It is commonly employed as a small signal amplifier in low-frequency applications such as radio receivers, television sets and audio amplifiers. In addition, it is also used in applications like pulse-width modulation (PWM) and motor control applications. The DRDN005W-7 can even be used as a switch or driver in some applications, though its relatively low power makes it ill-suited for most switching or driving duties.
Overall, the DRDN005W-7 is a reliable, versatile and efficient transistor for a wide range of small signal amplification, signal processing and motor control roles. Its superior gain and frequency response, coupled with good noise immunity, makes it an effective tool for a variety of applications. Furthermore, its adjustable resistor and darlington pair configuration make it possible to adjust the current flow as needed for optimal performance.
The specific data is subject to PDF, and the above content is for reference
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