Allicdata Part #: | DRDNB26WDITR-ND |
Manufacturer Part#: |
DRDNB26W-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN/DIODE SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRDNB26W-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 47 @ 50mA, 5V |
Base Part Number: | DRDNB26 |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Series: | -- |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Resistor - Base (R1): | 220 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 600mA |
Transistor Type: | NPN - Pre-Biased + Diode |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The DRDNB26W-7 bipolar junction transistor (BJT) is a pre-biased, single transistor designed for a variety of applications. It has a collector-base voltage of 26 volts, a collector current of 1.3 amperes, and a typical power dissipation of 0.4 watts. The DRDNB26W-7 is used for power management and switching applications, as well as for voltage regulation and amplification, and is suitable for use in a wide range of industries, from automotive and industrial to consumer and medical.
The DRDNB26W-7 is a lateral BJT, which means that its top and bottom layers, called the emitter and collector, are horizontally aligned. The current between the emitter and collector is determined by the voltage at the base, and the current can be increased or decreased by applying voltage to the base. Therefore, the DRDNB26W-7 can be used as a switch, a regulator, or an amplifier.
The DRDNB26W-7 is considered pre-biased because it is designed to be used in an operating mode that assumes a certain voltage and current are applied to the collector-base before the emitter-base. In this setup, the pre-biased BJT does not have to start from zero voltage, eliminating the need for a pre-charge sequence. The pre-biased design allows for faster switching times, lower power consumption, and more efficient overall operation, making it well-suited for applications that require fast switching and voltage regulation.
The DRDNB26W-7 is designed for both low-side and high-side switching applications. In low-side switching applications, current is switched from the collector to the emitter. This is accomplished by applying a voltage to the base that raises the voltage between the collector and the base. This, in turn, causes the current to increase, allowing it to flow from the collector to the emitter. In high-side switching applications, current is switched from the emitter to the collector. This is done by applying a voltage to the base that reduces the voltage between the emitter and the base. This decreases the current flowing through the emitter-collector, allowing it to be switched on and off.
The DRDNB26W-7 is also suitable for use in voltage regulation applications. To regulate the voltage, the base voltage is adjusted to vary the collector-emitter voltage. This causes the current flowing through the transistor to increase or decrease, allowing the output voltage to be adjusted. The DRDNB26W-7 is also used for amplifier applications, where the base voltage is varied to increase or decrease the collector current, which, in turn, varies the output voltage.
In conclusion, the DRDNB26W-7 is a pre-biased single BJT designed for a variety of applications, such as power management, switching, voltage regulation and amplifier circuits. Its pre-biased design makes it well-suited for applications that require fast switching and voltage regulation, while its lateral design makes it suitable for both low-side and high-side switching applications. Additionally, its collector-base voltage of 26 volts and collector current of 1.3 amperes, as well as its typical power dissipation of 0.4 watts, make the DRDNB26W-7 a reliable and efficient transistor for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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