DRV5013AGQDBZT Allicdata Electronics
Allicdata Part #:

DRV5013AGQDBZT-ND

Manufacturer Part#:

DRV5013AGQDBZT

Price: $ 0.00
Product Category:

Sensors, Transducers

Manufacturer: Texas Instruments
Short Description: MAGNETIC SWITCH LATCH
More Detail: Digital Switch Latch Open Drain Hall Effect
DataSheet: DRV5013AGQDBZT datasheetDRV5013AGQDBZT Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Part Status: Active
Function: Latch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 9mT Trip, -9mT Release
Test Condition: -40°C ~ 125°C
Voltage - Supply: 2.7 V ~ 38 V
Current - Supply (Max): 2.7mA (Typ)
Current - Output (Max): 30mA
Output Type: Open Drain
Features: Temperature Compensated
Operating Temperature: -40°C ~ 125°C (TA)
Description

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The DRV5013AGQDBZT is a solid-state magnetic sensing switch from Texas Instruments. This magnetic switch is designed for automotive applications that require reliable and robust operation. The device is used for a variety of purposes such as detecting end of travel, door position sensing, and other positioning or proximity tasks. It works by detecting the presence of a magnetic field and returning a digital signal in response.

Applications

The DRV5013AGQDBZT can be used in a wide variety of automotive applications such as door and trunk switch applications, sensing of end of travel positions, and position sensing of brakes. It is also used in luggage compartments, seatbelt alarm activation, and engine bay area detections. This device can also be used in various material handling and industrial machinery applications, e.g. for detecting the motion of a conveyor belt or the presence of a pallet.

Working Principle

The DRV5013AGQDBZT operates by detecting the presence of a magnetic field. The device consists of two components: a magnetoresistive switch (MT) and a Hall effect sensing element (HS). The MT is the sensing element of the device and is composed of a ferromagnetic core material surrounded by a cylindrical housing. The HS element is housed within the MT element and is designed to measure the magnetization of the core material which is caused by the presence of an external magnetic field.

When a magnetic field is present, such as that generated by a magnet, it will induce a voltage into the HS element which then produces a digital signal. The amount of voltage induced in the HS element is proportional to the strength of the magnetic field. This signal is then sent to the processor which is used to determine the action to be taken based on the signal.

In addition to the MT and HS elements, the DRV5013AGQDBZT also includes additional circuitry such as temperature sensors and a fault timer to ensure reliable and robust operation.

Conclusion

The DRV5013AGQDBZT is a robust and reliable magnetic sensing switch designed for automotive applications. The device consists of a magnetoresistive switch and a Hall effect sensing element which works by detecting the presence of a magnetic field. The device can be used in a variety of applications such as positioning and proximity tasks, engine bay area detection, seatbelt alarm activation, and luggage compartment sensing. The DRV5013AGQDBZT includes additional circuitry such as temperature sensors and a fault timer to ensure reliable and robust operation.

The specific data is subject to PDF, and the above content is for reference

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