DS1210SN+T&R Allicdata Electronics
Allicdata Part #:

DS1210SN+T&R-ND

Manufacturer Part#:

DS1210SN+T&R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC CNTRLR CHIP NV IND 16-SOIC
More Detail: N/A
DataSheet: DS1210SN+T&R datasheetDS1210SN+T&R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Controller Type: Nonvolatile RAM
Voltage - Supply: 4.75 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DS1210
Description

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The DS1210SN+T&R application field and working principle are classified under Memory - Controllers. The DS1210SN+T&R is an Enhanced Microprocessor Supervisory Circuit, designed to provide additional features to make the product more reliable and user friendly in non-volatile memory applications. The DS1210SN+T&R is designed for use with non-volatile memory devices, such as some types of Flash, EEPROM, and 3D2 memory devices, as well as other memory components. It is designed to provide the low-voltage supervisory, low-power modes, and battery switching circuitry required for many non-volatile memory systems.

When used in a microprocessor memory system, the DS1210SN+T&R monitors the microprocessor core voltage at one input and the write line of the memory device at the other input. If the memory device is to be programmed or if the microprocessor core voltage falls below a certain voltage level (set by external resistors), the low voltage detector (LVD) will turn off all power to the memory device and put it into the low power mode. This prevents the memory device from being overwritten or corrupted during programming or from alterations to the microprocessor core voltage.

The DS1210SN+T&R also monitors the power supply for level and overcurrent detection, and will switch off the non-volatile memory device in the event that the current level through the power supply exceeds an adjustable threshold. The LVDI (Low Voltage Detect Input) can be used to detect overvoltage levels as well. With these two features, the DS1210SN+T&R can be used to provide additional protection for the non-volatile memory device in the system.

The DS1210SN+T&R also provides various methods of connecting the non-volatile memory device in the system. For example, it can be used to connect a 16-bit data bus with multiple chip selects. The DS1210SN+T&R also provides a unique +RESET signal which can be used to program the memory device with different initialization values. This can be useful in microprocessor memory systems where the memory device needs to be initialized to a certain state at system reset.

The DS1210SN+T&R also provides an on-chip oscillator for self-timing functions, eliminating the need for external oscillators. In addition, it provides software selectable output power-on-reset and watchdog reset features. The watchdog reset feature allows the microprocessor to reset itself in the event of a lockup, while the power-on-reset keeps the microprocessor and other devices in the system in a known state until the power supply voltage has reached a certain level. Both of these features help to ensure that the system remains in a known state even in the event of a power failure.

The DS1210SN+T&R also provides an adjustable power-down timer, which allows the non-volatile memory device to enter a power-down mode automatically after a programmable interval, further reducing the overall power consumption in the system. The DS1210SN+T&R also provides a "sleep mode" which can be used to minimize the power consumption of the system without the need for an additional power-down circuit.

The DS1210SN+T&R is designed for use with Intel, Motorola, and other microprocessor memory systems. It is also suitable for use with 3V and 5V devices, as well as various logic families, making it suitable for use in a variety of applications. All of these features make the DS1210SN+T&R an excellent choice for non-volatile memory systems.

The specific data is subject to PDF, and the above content is for reference

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