DS1230AB-120+ Allicdata Electronics
Allicdata Part #:

DS1230AB-120+-ND

Manufacturer Part#:

DS1230AB-120+

Price: $ 21.55
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 256K PARALLEL 28EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: DS1230AB-120+ datasheetDS1230AB-120+ Datasheet/PDF
Quantity: 115
1 +: $ 19.58670
10 +: $ 18.60770
25 +: $ 17.17250
50 +: $ 16.31400
100 +: $ 14.76470
250 +: $ 14.02650
Stock 115Can Ship Immediately
$ 21.55
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP
Base Part Number: DS1230AB
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DS1230AB-120+ is a popular memory device used in many electronic fields. It was designed as a robust and reliable storage medium for many computers and other devices, and it is highly resistant to physical damage, temperature and voltage changes, and has a long service life.

DS1230AB-120+ is a type of non-volatile RAM (NVRAM). NVRAM works by storing data in an isolated medium and using the same technology as flash memory or EEPROM. The device is capable of storing 8-bit or 16-bit data, and is typically used for storing settings, configuration information or other critical data. It has a long life cycle and is considered to be highly reliable.

This memory device is excellent for applications that require a long-term memory solution. It is used in applications such as robotics, automation, gaming, communication, medical systems and many other industrial applications. Its wide range of features such as low power consumption, fast data transfer and high data storage capacity make it suitable for a variety of uses. It also has a high level of protection against noise and vibration.

DS1230AB-120+ has a 16 pin dual in-line package to require only a small amount of space in an application. The device can be programmed easily using internal pinouts, which makes it convenient and easy to use. The device also has the ability to be reprogrammed in the field, making it suitable for dynamic applications.

The working principle of DS1230AB-120+ is based on its dual-plane cell structure. The RAM structure consists of two planes of ferroelectric capacitors which store the data. When a signal is applied to one or multiple rows of the cell, its state switches from one to another, allowing data to be stored or read. As the signal is removed, the data becomes static and can be stored for a long time.

In summary, DS1230AB-120+ is a reliable and robust memory device. It can be used in a wide range of applications due to its features such as low power consumption, fast data transfer and high storage capacity. The device is highly resistant to physical shock, temperature and voltage changes, making it suitable for use in harsh environments. The compact size also makes it convenient and easy to use in small applications. It can also be reprogrammed in the field, making it very useful for dynamic applications.

The specific data is subject to PDF, and the above content is for reference

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