DS1220AB-120+

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	120ns
Access Time:	120ns
Memory Interface:	Parallel
Voltage - Supply:	4.75 V ~ 5.25 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Through Hole
Package / Case:	24-DIP Module (0.600", 15.24mm)
Supplier Device Package:	24-EDIP
Base Part Number:	DS1220A

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DS1220AB-120+ Memory Application Field and Working Principle

When it comes to memory, there are two common types to consider: dynamic and static. Dynamic memory is a type of memory that has limited capacity and generally requires power in order to maintain its state. Static memory, on the other hand, has unlimited capacity, which means that it can store large amounts of data without having to be powered. The DS1220AB-120+ is an example of static memory, as it uses a static RAM (SRAM) memory architecture.The DS1220AB-120+ is a high-performance memory designed for use in both high-end systems and embedded applications. The chip uses the Enhanced DRAM Technology (EDT) from Motorola Inc. to achieve speeds of up to 120 MHz and data rates up to 8 Megabytes/sec. This type of memory is ideal for use in multimedia applications, such as video and image processing, as well as other applications, such as databases and web browsing.The DS1220AB-120+ is also designed for low-power operation and can be powered down in order to conserve energy. This feature makes the DS1220AB-120+ an ideal choice for embedded applications, where power consumption needs to be kept to a minimum. In addition, the chip is available in a 100-pin TQFP package and has a friendly pinout that makes it easy to work with.The DS1220AB-120+ has a number of features that make it an ideal choice for use in memory applications. The chip is organized into 256K x 8 banks, which can be accessed in both burst and page modes. This feature allows the chip to be used in applications where a large amount of data needs to be stored, as well as in applications where data needs to be accessed rapidly. In addition, the chip has an integrated error correction code (ECC), which ensures that data stored in the memory is kept secure.The DS1220AB-120+ uses static RAM (SRAM) to store data. SRAM is faster than dynamic RAM (DRAM) and is more reliable due to the fact that it does not need to be refreshed. Furthermore, the use of SRAM ensures that data stored in the memory is kept secure, as it does not suffer from the same type of data corruption that can occur with DRAM.The DS1220AB-120+ is designed for use in industrial and automotive applications, and can be used in a variety of applications, such as digital signal processing, data acquisition and motor control. The chip is also designed for automotive applications, providing extreme temperature stability, meaning it can be used in temperatures as low as -40°C. The DS1220AB-120+ is designed to be both reliable and efficient, providing a cost-effective solution for applications that require large amounts of storage. It is ideal for embedded applications, as it is low power and can be powered down in order to conserve energy. The integrated ECC also ensures that data stored in the memory is kept secure, and the wide variety of applications that the DS1220AB-120+ can be used in makes it an ideal choice for a variety of applications.

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