
Allicdata Part #: | DS1230ABP-70IND+-ND |
Manufacturer Part#: |
DS1230ABP-70IND+ |
Price: | $ 19.80 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 256K PARALLEL 34PWRCAP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
40 +: | $ 17.99940 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.75 V ~ 5.25 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-PowerCap™ Module |
Supplier Device Package: | 34-PowerCap Module |
Base Part Number: | DS1230AB |
Description
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Application Field of DS1230ABP-70IND+ Memory
DS1230ABP-70IND+ memory is a widely used non-volatile static random access memory (NVRAM) module. It is widely used in a variety of embedded applications such as industrial automation, process control and data storage. NVRAM is a type of semiconductor memory that is used to store data without the need for power. It is a non-volatile form of memory, meaning it does not need to be refreshed like DRAM memory does. It is different from Flash memory in that it does not require an erase routine in order to change information. The DS1230ABP-70IND+ memory is an 8-pin DIP (Dual In-line Package) device, which includes an onboard battery. The battery allows the device to maintain data even in the absence of power, up to 10 years. This makes it ideal for applications that require frequent write cycles, such as industrial automation, process control and data storage.Working Principle of DS1230ABP-70IND+ Memory
NVRAM is composed of a capacitor, a transistor and a battery. The charging of the capacitor is done by a transistor, which is a type of semiconductor device (typically a metal oxide semiconductor field effect transistor or a bipolar junction transistor).When the transistor is turned on, electricity is applied to the capacitor and the transistor is switched off. This process of charging the capacitor achieves the non-volatile part of the NVRAM. The data is stored in the capacitor, meaning it can be retained for an extended period of time even when power is not present.When the capacitor has been charged, the battery takes over supplying power to the capacitor. The battery also provides protection against voltage spikes, preventing the stored data from being lost if a power interruption occurs.The DS1230ABP-70IND+ is a non-volatile memory module that provides reliable data storage for a wide range of applications. It has a maximum data retention of 10 years and can be used in a variety of temperature ranges, making it suitable for use in industrial, automation, process control and data storage applications. The DS1230ABP-70IND+ memory module provides an efficient way to store data without relying on power. It is a reliable and cost-effective solution for a variety of embedded applications.The specific data is subject to PDF, and the above content is for reference
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