DS1225AB-150+

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DS1225AB-150+ Memory Application Field and Working Principle

DS1225AB-150+ memory is a high-performance, low-power Static RAM chip manufactured by Dallas Semiconductor. The memory is a 128K x 8-bit device organized as 16K x 8-bit words, packaged in a 130-pin dual-inline package. Due to its low power consumption, minimal operating current, fast read/write cycle times and ease of use, it is ideal for use in embedded systems, automotive systems, industrial systems and other computing applications.

The DS1225AB-150+ is a CMOS semiconductor that features high speed, low-power operation and a wide operating temperature range. The memory is organized as 16K x 8-bit words, with one bit per cell. The memory is organized in three 8K x 8-bit blocks, with each block containing 8K x 8-bit words. The memory contains a page mode feature, which allows the user to quickly break down larger amounts of data into smaller blocks for fast read/write access. Each 8K block can be accessed separately in page mode.

The unique chip architecture of the DS1225AB-150+ memory also ensures low power consumption, minimal operating current and an extremely fast read/write cycle. The chip\'s SRAM array is designated as nonvolatile, meaning that it stores data content even when the power to the device is turned off. The memory supports a range of operating frequencies, making it suitable for application in a wide range of embedded and non-embedded applications.

At the heart of the DS1225AB-150+ memory is the programmable refresh generator which allows adjustment of the refresh rate and refresh period times. This generator drives the refresh operations during active memory cycles and generates a large enough refresh signal to satisfy the data retention requirements of the memory. The refresh generator allows the user to reduce power consumption and device wear with reduced refresh cycles.

The read/write timing and access time are adjustable as well, allowing custom solutions to be developed for specific applications. The device is powered by a +5V VCC supply and an externally generated A12 voltage. The memory is accessed through a 16-bit address bus or direct 5-bit address for page mode. Data is read and written with a separate 8-bit DQ input/output line which is the bidirectional data bus.

The programmable refresh generator, adjustable read/write timing and access time, combined with the low power consumption and small form factor make the DS1225AB-150+ PBGA memory an ideal solution for use in embedded and automotive systems, industrial systems and other applications requiring fast, low-power memories.

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