DS1225AD-200 Allicdata Electronics
Allicdata Part #:

DS1225AD-200-ND

Manufacturer Part#:

DS1225AD-200

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 64K PARALLEL 28EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8)...
DataSheet: DS1225AD-200 datasheetDS1225AD-200 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 200ns
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP
Base Part Number: DS1225A
Description

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Memory

The DS1225AD-200 is a non-volatile static RAM, commonly referred to as an NVSRAM, that is used in a wide variety of applications and has a number of key features and benefits.

Application Field

This NVSRAM can be used in a variety of fields including industrial, military and aerospace applications where there is a need for reliable, efficient and secure data storage solutions. This NVSRAM has a twice the read/write cycle performance of traditional SRAM and enables rapid data transfers with low power consumption. This makes it suitable for applications that require high-speed data transmission and memory storage, such as test and measurement systems, cameras, robotics and aerospace.

This NVSRAM is also incredibly durable, making it ideal for industrial applications, such as automated production lines where the data storage and management needs to be reliable. The non-volatility of the NVSRAM ensures that the data is not lost even in the event of power failure.

Working Principle

The working principle of the DS1225AD-200 is based on the principle of boost-up. This simply means that the memory device is able to store a certain amount of data in its memory array for a period of time, then when power is applied it can boost that data up to a higher voltage. This is similar to the process of writing to a normal SRAM, except that the data is stored in a non-volatile manner, which means it will remain stored even after power is removed.

The boost-up process allows the user to execute sequences of reads and writes faster than would be possible with a standard SRAM. Additionally, the boost-up process is more efficient than the regular SRAM read and write process, as it allows for more power-efficient operation and faster operation times.

The DS1225AD-200 also has a built-in system for error correction, which means that it is possible for the device to detect and account for false data read from the memory array if there is an error. This ensures that any errors are corrected, which increases reliability and data integrity.

The DS1225AD-200 provides high speeds, low power consumption and excellent reliability for a variety of applications. It is a reliable and efficient device for any industrial, military or aerospace application that requires secure data storage solutions.

The specific data is subject to PDF, and the above content is for reference

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