DS1230AB-200 Allicdata Electronics
Allicdata Part #:

DS1230AB-200-ND

Manufacturer Part#:

DS1230AB-200

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 256K PARALLEL 28EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: DS1230AB-200 datasheetDS1230AB-200 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 200ns
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP
Base Part Number: DS1230AB
Description

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Memory is a core component of our lives. It\'s an important factor in almost every type of computing device, from computers and telephones to cameras and navigation systems. This article will discuss the application field and working principle of the DS1230AB-200 Memory.

The DS1230AB-200 is a Non-Volatile SRAM (NVSRAM). It is capable of storing 64KB of data and utilizes a 4-Bit Word architecture. This makes it a great choice for a wide variety of applications that require large amounts of data without the risk of losing data in power outages. The chip operates at up to 25MHz, depending on the package, providing fast data access.

This memory chip is well suited for applications that need data storage, such as routers, automotive systems, industrial systems, and consumer electronics. It is also used in systems that require large amounts of data to be retained and updated with minimal power consumption. This makes the DS1230AB-200 a great choice for applications such as global positioning systems and alarms, where fast data access and long-term data storage is needed.

The DS1230AB-200 is powered by a 3.3V supply. The chip is activated by two separate control signals, Data In, and Data Out. It operates in both write-through and write-back cycles, so data can be written or read from memory quickly and conveniently, without having to wait for data to be written. The chip also supports clock speeds of up to 184 MHz, allowing for faster access times and data transfer.

Inside the DS1230AB-200 is an array of four 8K-bit memories organized as two 16K-bit memories. The two banks share a common write-enable line and separate chip enable lines are provided for each memory. The chip also supports write-through and write-back cycles, allowing for fast data access.

The DS1230AB-200 is also equipped with error correction and error trapping capabilities. The internal data protection circuitry provides protection against accidental memory write-over, and is armed by the DATAIN and the DATAOUT signals. In addition, the chip also supports error-correction and error-trapping capabilities, so that data errors can be detected and corrected.

In summary, the DS1230AB-200 provides an efficient and reliable method for storing and transferring large amounts of data without the risk of data loss. It is perfect for applications such as global positioning systems, surveying systems, alarms, data logging and more, as it is designed for fast data access and long-term data storage. The chip\'s error-correction and error-trapping capabilities ensure that data integrity remains intact, even if accidental write-overs occur.

The specific data is subject to PDF, and the above content is for reference

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