DS1230W-150+

The DS1230W-150+ is a non-volatile, CMOS static RAM memory chip. Developed by Dallas Semiconductor, the DS1230W-150+ memory is a 128-bit device with a 16K x 8 memory array. Its fast access times along with low current consumption makes it commonly used in many applications requiring an efficient, reliable memory solution, such as industrial equipment, wireless communications, automotive equipment and instrumentation systems.

Features

• Operating voltage range of 2.7V to 3.6V
• Interface with both 3-state and non-3-state control signals
• Supply current of approximately 1 mA per chip
• High speed operation due to fast cycle times of typically 20 ns
• Built-in self-test capabilities
• High data retention between 1 to 10 years

Applications

The DS1230W-150+ is an ideal non-volatile memory solution for industrial, automotive and instrumentation applications. Its small size and low current consumption make it suited for use in embedded microcontroller systems. These types of systems often incorporate small form factor components that require a reliable memory solution stored in a limited area.

This memory also features built-in self-test capabilities that allow the system to ensure its proper functioning at any time. It also has high data retention capabilities, providing an amount of assurance of five to 10 years.

One of the most common applications where the DS1230W-150+ is used is in automotive systems, including engine controllers and transmission controllers. Its fast access times make it well suited for use in these types of applications, as a fast reaction from the controller to a situation is often required.

Working Principle

The DS1230W-150+ operates by using a combination of CMOS and NVSRAM (Non-Volatile Static RAM) technologies to achieve non-volatility within the memory. CMOS (Complementary Metal-Oxide-Semiconductor) is used for the logic circuitry and its use of high-density fabrication technologies allow the 8K x 16 memory array to fit within its small size.

NVSRAM (Non-Volatile Static RAM) is used to provide non-volatility within the memory. This is achieved by the use of a small capacitor to maintain the integrity of the memory’s cells in the event of power loss. This keeps the memory cells from randomly resetting when power is restored.

The combination of CMOS for the logic together with NVSRAM for the non-volatility allows the DS1230W-150+ to provide a reliable and compact memory solution within a single chip.