DS1230Y-120+ Allicdata Electronics
Allicdata Part #:

DS1230Y-120+-ND

Manufacturer Part#:

DS1230Y-120+

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 256K PARALLEL 28EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: DS1230Y-120+ datasheetDS1230Y-120+ Datasheet/PDF
Quantity: 544
Stock 544Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP
Base Part Number: DS1230Y
Description

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Memory

DS1230Y-120+ is a nonvolatile SRAM memory device that offers low-cost memory storage for a variety of applications. The device is powered solely or bi-directionally, which makes it capable of storing data even when power is unavailable. This device is available in 8-bit and 16-bit interfaces, making it easy to adapt to a variety of different platforms, regardless of whether the processor bus is 8-bit or 16-bit. The device is available in a variety of different packages, including SOIC as well as PDIP packaging.

Application Field

DS1230Y-120+ is a robust and reliable nonvolatile SRAM device which is ideal for many applications that require low-cost and low-power memory storage. For example, DS1230Y-120+ can be used in telecommunications and embedded systems, where it is advantageous to have the data stored even when external power is absent. Furthermore, it can be used in computers and workstations, providing low-cost memory and backup. Additionally, DS1230Y-120+ can also be used for medical and industrial applications, providing a dependable nonvolatile storage for important data or settings.

Working Principle

The DS1230Y-120+ device is based on a Static Random Access Memory (SRAM) architecture with a nonvolatile controller that uses both FETs and capacitors to store the contents of the SRAM when power is lost. The SRAM cells contain FETs and capacitors to store the data content information when the power is interrupted. The SRAM cells are interconnected to the nonvolatile controller at the same time, when the power is available. The nonvolatile controller frequency is ~32 KHz, which allows for user programmable endurance and data retention.

The DS1230Y-120+ device can be powered solely or bi-directionally, making it a versatile device. When enabled by the user, the device will automatically store the RAM contents in nonvolatile memory when power is interrupted and the device\'s ability to do so will depend on the user\'s programming of the device\'s endurance and retention settings. When power is available, the device will operate exactly as a normal Static Random Access Memory (SRAM). As long as power is available, the contents of the RAM can be written/read using the appropriate commands which are understood by the device’s controller.

The specific data is subject to PDF, and the above content is for reference

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