DS1230Y-120 Allicdata Electronics
Allicdata Part #:

DS1230Y-120-ND

Manufacturer Part#:

DS1230Y-120

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 256K PARALLEL 28EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: DS1230Y-120 datasheetDS1230Y-120 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP
Base Part Number: DS1230Y
Description

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Memory technologies have progressed rapidly in recent years, and with this progression, new application fields and working principles have emerged for memorization devices. The DS1230Y-120 memory device is one such example of a memory device that has already become popular in the industry. In this article, we will look at the application field and working principle of the DS1230Y-120 memory device.

Application Field

The DS1230Y-120 is designed primarily for use in embedded systems, such as those found in motor vehicles and communication systems. It is often used in high-density memory applications due to its compact size and low power consumption. The memory device can store up to 1M words of user-defined data at a time and is composed of 128Kx8 bit conductors, making it ideal for systems requiring high data transfer rates. The device is also compliant with JEDEC standards and rated for 100,000 erase/write cycles.

Working Principle

The DS1230Y-120 is composed of a single-chip 8-bit CMOS static RAM device that utilizes an Advanced Low Power (ALP) process. This process enables the device to provide access times of up to 120ns while operating at a low voltage. The device is also designed to withstand shock and vibration, and includes integrated capacitors for improved stability and reliability. Additionally, the device includes a full complement of chip select signals, address lines, and data buses to simplify system design.

In terms of operation, the DS1230Y-120 operates in both byte and word modes. In byte mode, the device is capable of delivering 152nS access time. In word mode, the device utilizes a 9-bit word enable signal and can provide access time of up to 50nS. The device also includes an onboard controller which provides a variety of control signals, including write enable, address mask, and write verify. Together, these features enable the device to operate in an extremely efficient manner.

Conclusion

The DS1230Y-120 memory device has become an increasingly popular choice for embedded systems in recent years. Its ability to store up to 1M words of user-defined data, its compliance with JEDEC standards, and its low power consumption, amongst other features, make it ideal for a number of memory applications. Additionally, its fast access times, integrated controller, and range of chip select signals, address lines, and data buses make it an extremely efficient and reliable device.

The specific data is subject to PDF, and the above content is for reference

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