DS1230Y-200IND+ Allicdata Electronics
Allicdata Part #:

DS1230Y-200IND+-ND

Manufacturer Part#:

DS1230Y-200IND+

Price: $ 22.40
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 256K PARALLEL 28EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: DS1230Y-200IND+ datasheetDS1230Y-200IND+ Datasheet/PDF
Quantity: 19
1 +: $ 22.40000
10 +: $ 21.72800
100 +: $ 21.28000
1000 +: $ 20.83200
10000 +: $ 20.16000
Stock 19Can Ship Immediately
$ 22.4
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 200ns
Access Time: 200ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP
Base Part Number: DS1230Y
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DS1230Y-200IND+ Memory is a non-volatile memory chip that offers a variety of applications. It provides very high performance in a small package, making it ideal for use in embedded systems, automotive applications, and handheld devices. The memory also offers an extended temperature range, which makes it suitable for harsh environments and is capable of operating at up to 200°C. It is designed to store data reliably in a variety of conditions, even during power loss, and can maintain data storage for long periods of time.

The DS1230Y-200IND+ Memory is a highly secure storage device, offering a number of features to protect data. It features an embedded EFP (Encryption Filter Pin) to secure data with an encryption algorithm. The memory also has a write-protect function to prevent data from being accidentally written over. With both these features, the memory ensures only authorized access to the stored data.

The DS1230Y-200IND+ Memory is a non-volatile memory chip, which means that it does not require a constant supply of power to retain data, unlike other forms of memory such as SRAM or DRAM. Instead, it stores data in a series of ferroelectric capacitors that retain the data for years, even when power is not applied. This makes it ideal for applications requiring data to be stored for long periods of time, and to be reliably accessed later.

The DS1230Y-200IND+ Memory is designed to operate at low voltages, as low as 0.75V, making it suitable for use in low power applications. The device also offers a number of features to protect data, such as write and erase protection, as well as error detection and correction. This ensures that data is stored reliably, and that any errors are corrected quickly and accurately.

The DS1230Y-200IND+ Memory is ideal for embedded applications, offering a wide range of features and performance. It is suitable for a variety of applications, due to its high security, extended temperature range and low power consumption. Additionally, the memory offers reliable data storage for long periods of time and is capable of operating at a wide range of temperatures. With all these features, the memory is an ideal choice for embedded applications and other applications where data needs to be reliably stored over long periods of time.

The specific data is subject to PDF, and the above content is for reference

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