
Allicdata Part #: | DS1230Y-70-ND |
Manufacturer Part#: |
DS1230Y-70 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 256K PARALLEL 28EDIP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-DIP Module (0.600", 15.24mm) |
Supplier Device Package: | 28-EDIP |
Base Part Number: | DS1230Y |
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DS1230Y-70, also known as Dallas Semiconductor’s CMOS SRAM, is a non-volatile random access memory (RAM). It is widely used in digital devices, such as computers, peripherals, and other electronic devices. On the market, DS1230Y-70 memory chips are available in a wide range of sizes and capacities. They offer increased speed and flexibility, making them suitable for a variety of applications, from data buffer storage to program and data caching.
The DS1230Y-70 operates with a static RAM (SRAM) chip. SRAM consists of cells, which are two or more transistors that are connected by a physical wire connection. When the cell is powered, one of the transistors switches on, allowing the cell to “store” a certain amount of memory. SRAM cells are generally faster than other types of memory, such as DRAM, but also require more power.
The DS1230Y-70 chip works on a premise similar to other SRAMs, by using the two or more transistors that are connected by a physical wire connection to store a certain amount of memory. These transistors are arranged in a crossbar array, which uses static RAM at the lowest level of the chip. This ensures that no refresh cycle is required, as SRAM does not need to be continually refreshed in order to maintain its contents.
DS1230Y-70 memory chips are designed to provide faster performance due to their small size and low power consumption. The chip’s cache size (number of words times the word size) is one of the factors that determine the performance of the chip. The chip also has support for parity and cyclic redundancy check (CRC) to ensure data integrity. It is also equipped with an asynchronous write-back cache, which helps in improving the data write speed.
Unlike dynamic RAM (DRAM), which loses its stored information when a power failure or other problem occurs, SRAMs like DS1230Y-70 retain their information even if the power to the device is disrupted. This property is useful in applications that require non-volatile memory, such as in flash memory systems.
The DS1230Y-70 is a highly reliable and powerful memory chip, which offers several advantages over other types of memory. It can be used for a wide range of applications, from consumer electronics to embedded systems. With its fast speed and low power consumption, it can provide the necessary memory resources that are needed for performing complex tasks.
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