
Allicdata Part #: | DS1230Y-85-ND |
Manufacturer Part#: |
DS1230Y-85 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 256K PARALLEL 28EDIP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 85ns |
Access Time: | 85ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-DIP Module (0.600", 15.24mm) |
Supplier Device Package: | 28-EDIP |
Base Part Number: | DS1230Y |
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The DS1230Y-85 is a non-volatile 256K×8 bit CMOS static RAM that combines the convenience of SRAM with the durability and low power of EEPROM. This makes it ideal for a variety of memory applications in a broad range of end products such as handheld digital cameras, PDAs and other portable electronic devices.
The DS1230Y-85 offers a wide operating voltage range of 2.7 V to 5.5 V, allowing the memory cells to be accessed with low power and is able to maintain data retention for a minimum of 10-years without the need for a battery backup. The device can also be protected from accidental interference by its built-in hardware write-enable circuitry.
The device’s architecture allows for high-speed read/write operations, enabling faster access to information. In addition, the chip features an on-chip self-test logic that runs all 256K bit locations, simplifying the process of detecting faulty memory chips or memory cells.
The DS1230Y-85 has been designed to be used in a wide range of applications, including non-volatile data logging, digital signal processing, embedded control systems and design verification. The device can also be used as an alternate system memory, offering the ability to store critical program details without having to resort to a power-hungry battery backup.
The DS1230Y-85 features a write-in-place design, allowing for all 256K bits to be written simultaneously. This makes it easier to reprogram the memory, enabling a much faster programming process. In addition, the device can be used as an alternate write buffer, allowing multiple writes to occur simultaneously.
The DS1230Y-85 also includes an on-chip watchdog timer which can be used to detect and prevent system-wide malfunctions. This allows the system to be safely rebooted in the event of unexpected errors or power outages. Additionally, the timer can be used to monitor system health and to ensure proper operation and a reliable product.
The device\'s architecture is optimized to minimize power and achieve a high degree of efficiency with its standby current typically as low as 285 μA at VCC = 3.3 V. This is especially beneficial for applications where system power is at a premium.
The DS1230Y-85 is extremely reliable and durable, making it perfect for a wide range of industrial, commercial and consumer applications. In addition, its low power consumption makes it well suited for portable devices, such as mobile phones, digital cameras and PDAs. Its robust design and high-speed read/write operations make it an ideal choice for a wide variety of memory applications.
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