DS1245AB-85

Memory

The DS1245AB-85 is a non-volatile static RAM (nvSRAM) chip that was developed by Dallas Semiconductor to combine the properties of static RAM with the non-volatility of a battery-backed memory. A non-volatile memory does not lose information when the power is turned off and can save data without the need for a power supply. This makes the DS1245AB-85 suitable for a wide range of applications where constant power cannot be assured.

Applications

The DS1245AB-85 is ideal for applications requiring a reliable and low-power solution to store data. It is commonly used in industrial automation, general-purpose input/output (GPIO) control, programmable logic control (PLC) systems, energy meters, IP cameras and various other embedded systems. Additionally, its status as a non-volatile memory makes it suitable for applications where power failure is a concern, such as industrial controllers, medical devices and military and aerospace systems.

Electronics

The DS1245AB-85 is an 8K non-volatile static RAM (nvSRAM) chip that operates from a voltage range of 4.5V to 6V. It offers low power operation, with an active current as low as 7µA at 5V and extremely low stand-by current of 5µA. The device is also highly resistant to electrical and EMI/RFI interference, which makes it suitable for industrial applications where these factors are a concern.

Working principle

The DS1245AB-85 uses a combination of static and dynamic circuitry to store data. When the device is powered, a static standby circuit keeps the RAM cells’ contents intact, regardless of whether the power supply is off or on. When the power to the device is turned off, a battery is used to supply power to the static circuit and keep the information stored in the RAM intact. When the power is restored, the static RAM automatically "flushes" all data back into the RAM cells.

Conclusion

The DS1245AB-85 non-volatile static RAM (nvSRAM) chip is an ideal choice for applications requiring reliable, low-power data storage. Its combination of static and dynamic circuitry enables it to provide extended data retention of up to 100 years, and its highly resistant to electrical and EMI/RFI interference makes it suitable for industrial applications.