Allicdata Part #: | DS1245YL-100-ND |
Manufacturer Part#: |
DS1245YL-100 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 1M PARALLEL 34LPM |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8... |
DataSheet: | DS1245YL-100 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-LPM |
Supplier Device Package: | 34-LPM |
Base Part Number: | DS1245Y |
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As technology advances, devices are becoming more and more specialized. Memory is one of the types of devices that require customization to suit their specific application fields. The DS1245YL-100 is a specialized type of memory device that is frequently used in a variety of industries for its capacity and performance.
The DS1245YL-100 is built with an 8-pin DIP package that contains two clock oscillators, one for the write speed, and one for the read speed. The device also contains non-volatile static random-access memory (NVSRAM) that helps it maintain its data even when the device is powered down. This makes it perfect for applications that require memory data to be retained over a long period of time.
The DS1245YL-100’s performance is impressive, as it can operate at full speed with read and write times of 150ns and 20ns respectively. Its capacity is also quite satisfactory, as it can hold up to 4,096 bytes of memory. For improved performance, the device also supports built-in buffered reads and writes, making it suitable for industrial applications.
In terms of its working principle, the DS1245YL-100 uses a four-transistor SRAM cell to store its data. This SRAM cell consists of two four-transistor memory cells that are placed side by side in a cross-coupled circuit and linked together by an access transistor. During the read and write processes, the access transistor is activated and data is transferred into the memory cell.
The datasheet of the device also specified that the device has an operating voltage range of 3V to 5.5V and an operating temperature range of 0°C to +70°C. This means that the device can be used in many different environments and applications.
The DS1245YL-100 is mainly used in embedded system applications. It is used in smart cards, microcontrollers, and other system components that require memory data retention. It is also used in various types of programmable logic controllers and in industrial control systems. In addition, the device\'s non-volatility provides a reliable backup storage, allowing programs and settings to be saved without the risk of data loss. This makes the DS1245YL-100 a great choice for applications that require data to be retained over a long period of time.
In addition to its wide range of applications, the DS1245YL-100 has a number of advantages. Its non-volatile memory ensures that it can retain data even when the device is powered down. Its buffered read and write operations also make it perfect for embedded systems. Furthermore, its wide operating voltage range and temperature range enable it to be used in various applications.
Overall, the DS1245YL-100 is a versatile and reliable piece of memory equipment, suitable for a variety of embedded, industrial, and data retention applications. With its capacity, performance, and convenient features, the device can be used in many different settings.
The specific data is subject to PDF, and the above content is for reference
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