DS1245YP-100

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	100ns
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	34-PowerCap™ Module
Supplier Device Package:	34-PowerCap Module
Base Part Number:	DS1245Y

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Memory - DS1245YP-100 Application Field and Working Principle

DS1245YP-100 is a non-volatile 128Kb SRAM, specifically designed for efficient storage and retrieval of data in commercial, industrial and avionic applications. It is targeted for applications where high speed and low power consumption are required. The 8Kb, 16Kb and 32Kb versions of the DS1245YP-100 device are available as a byte-wide or two-byte wide device. The device has an automatic power-down feature for minimizing power consumption when the bus is inactive. In addition to that, it also has an auto-write protect feature that prevents inadvertent unwanted programming.

Application Field

The DS1245YP-100 is designed for applications that require dynamic data storage and retrieval. Typical applications include memory cards, video game cartridges, and avionic systems. The device can be used in harsh environments such as aerospace, automobile, military, and medical. The SRAM device offers 128Kb of non-volatile storage, making it suitable for applications that require large amounts of data to be stored and retrieved.

Working Principle

The DS1245YP-100 is a non-volatile SRAM that uses a "dual port access" design. This allows independent access of the device from two separate ports. The device is accessed from two separate ports, designated as "port A" and "port B", allowing two simultaneous reads and writes. Furthermore, the device is designed to perform multiple reads and writes with a single "Write Enable" line and "Write Protect" line. This allows for efficient operation and improved performance. The device also features a "power-down" mode that operates at very low power consumption. This is ideal for applications where power and battery life are of paramount importance. The device also has an auto-write protect feature that prevents inadvertent and unwanted programming. In addition, the device also has a programmable time-out feature that allows the device to "sleep" and conserve power when not in use. The device also offers robust operation in conditions of extreme temperatures, shock, and vibration. Its wide voltage operation and ECC (Error Correcting Code) capabilities ensure reliable data storage and retrieval in commercial, industrial and avionic applications. To program the DS1245YP-100 device, it can be placed in program mode and data can be written to the device via the two ports, or through a serial or parallel interface. The device can also be programmed via non-volatile memory (Flash) programming or volatile memory (RAM) programming.

Conclusion

The DS1245YP-100 is an ideal non-volatile SRAM device for applications that require dynamic data storage and retrieval, particularly where power consumption and battery life are of paramount importance. Its dual port access design allows for efficient operation and improved performance. The device also offers robust operation in extreme temperatures, shock, and vibration, while its wide voltage operation and ECC capacities ensure reliable data storage and retrieval in commercial, industrial and avionic applications.

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